Nitridation of the stacked poly-Si gate to suppress the boron penetration in pMOS

Lai, Chao−Sung; Lee, Chung Len; Lei, Tan Fu; Chao, Tien Sheng

doi:10.1109/55.790724

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Grain Re-growth Suppression1

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2015

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Cited by 10 publications

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“…As a result, the grain regrowth after the SG-MONOS formation can be suppressed, and the grain size is smaller than that in the single poly-Si layer. 29,30) V ddmin of SRAM and the V th =I ds distribution from DMA-TEG are shown in Fig. 7.…”

Section: Grain Re-growth Suppressionmentioning

confidence: 99%

Development of highly reliable static random access memory for 40-nm embedded split gate-MONOS flash memory

Okamoto

Maekawa

Kawashima

et al. 2015

Jpn. J. Appl. Phys.

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High quality static random access memory (SRAM) for 40-nm embedded MONOS flash memory with split gate (SG-MONOS) was developed. Marginal failure, which results in threshold voltage/drain current tailing and outliers of SRAM transistors, occurs when using a conventional SRAM structure. These phenomena can be explained by not only gate depletion but also partial depletion and percolation path formation in the MOS channel. A stacked poly-Si gate structure can suppress these phenomena and achieve high quality SRAM without any defects in the 6σ level and with high affinity to the 40-nm SG-MONOS process was developed.

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Section: Grain Re-growth Suppressionmentioning

confidence: 99%