Nickel-Aluminum Alloy Silicides with High Aluminum Content for Contact Resistance Reduction and Integration in n-Channel Field-Effect Transistors

Koh, Amanda; Lee, Rinus Tek-Po; Lim, Andy Eu-Jin; Lai, Donny; Chi, Dongzhi; Hoe, Keat-Mun; Balasubramanian, N.; Samudra, Ganesh S.; Yeo, Yee-Chia

doi:10.1149/1.2823567

Cited by 6 publications

(3 citation statements)

References 11 publications

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“…However, although the tendency of draining Al in NiSi with increasing MWA power was observed in both N2 and N4, the effect of φ bn elevation of Al remained insufficiently intense to overcome the φ bn reduction effect in N4. As observed in Figure 4 , compared with N2, substantial accumulation of Al still occurred above the interface in N4 after diffusion with promoted microwave radiation, which presumably affected SBH regulation [ 42 ]. In our case, with an MWA power of 3500 W, the calculated dose of Al from 50 nm above the interface and to that varied from 3.92 × 10 13 cm −2 (N2) to 1.33 × 10 14 cm −2 (N4) depending on the Al implantation energy of the device.…”

Section: Resultsmentioning

confidence: 99%

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Sun

et al. 2018

Materials

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Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B) and aluminum (Al) in combination with microwave annealing (MWA). By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget.

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Section: Resultsmentioning

confidence: 99%

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Sun

et al. 2018

Materials

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“…The dependence of Φ B n on the Al concentration in NiSi was also studied [28], [29]. Φ B n decreases from 0.65 eV for NiSi to about 0.41 eV for NiAlSi with about 20% Al.…”

Section: A Electron Barrier Height φ B N Adjustment For N-fetsmentioning

confidence: 99%

Advanced source/drain technologies for parasitic resistance reduction

Yeo

2010

2010 International Workshop on Junction Technology Extended Abstracts

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To achieve high MOSFET drive current and speed in future technology nodes, potential bottlenecks such as high contact resistance should be resolved. In this paper, we review the technology solutions available for reducing the contact resistance between a metal silicide contact and the source/drain region. Novel approaches for reducing the electron and hole barrier heights between the metal silicide contact and the source/drain region in n-and p-FETs will be examined. Integration of these approaches in advanced device architectures will be shown.

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“…It should be noted that the metal introduced does not generally distribute uniformly in NiSi, and the effectiveness of this alloying technique for Φ B n tuning depends on whether the added metal can be introduced at high concentration levels near the interface with the heavily doped semiconductor. We found that Ti, Dy, and Yb tend to redistribute near the top of the silicide, therefore We have also studied the dependence of Φ B n on the Al concentration in NiSi [22,23]. Φ B n decreases from 0.65 eV for NiSi to about 0.41 eV for NiAlSi with about 20% Al.…”

Section: Advanced Silicides/germanosilicides For Barrier Height Tuningmentioning

confidence: 99%

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

Yeo

2010

ECS Trans.

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Contact resistance is becoming an important limiting factor for achieving high MOSFET drive current and speed in future technology nodes. In this paper, we review the technology solutions for reducing the contact resistance between a metal silicide contact and the source/drain region.Several new approaches for decreasing the electron and hole barrier heights between the source/drain region and the silicide layer in n-FET and p-FET, respectively, will be examined. Integration of these approaches in advanced device architectures will be discussed.

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Nickel-Aluminum Alloy Silicides with High Aluminum Content for Contact Resistance Reduction and Integration in n-Channel Field-Effect Transistors

Cited by 6 publications

References 11 publications

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Advanced source/drain technologies for parasitic resistance reduction

Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction

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