We report the integration of nickel platinum germanosilicide (Ni 1−y Pt y SiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni 1−y Pt y SiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni 1−y Pt y SiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (Φ P B ) among the Ni 1−y Pt y SiGe candidates evaluated. The low Φ P B (0.309 eV) provides a 15% reduction in series resistance R series . With a superior morphological stability and reduced R series , FinFETs integrated with Ni 0.90 Pt 0.10 SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts.
We report for the first time, the use of pulsed laser annealing (PLA) on multiple-gate field-effect transistors (MuGFETs) with silicon-carbon (Si 1−x C x ) source and drain (S/D) for enhanced dopant activation and improved strain effects. Si 1−x C x S/D exposed to consecutive laser irradiations demonstrated superior dopant activation with a ∼60% reduction in resistivity compared to rapid thermal annealed S/D. In addition, with the application of PLA on epitaxially grown Si 0.99 C 0.01 , substitutional carbon concentration C sub increased from 1.0% (as grown) to 1.21%. This is also significantly higher than the C sub of 0.71% for rapid thermal annealed Si 0.99 C 0.01 S/D. With a higher strain and enhanced dopant activation, MuGFETs with laser annealed Si 0.99 C 0.01 S/D show a ∼53% drain-current improvement compared to MuGFETs with rapid thermal annealed Si 0.99 C 0.01 S/D.
In this paper, we demonstrate the silicidation of Ni 1−x Al x alloy film with the highest Al concentration reported to date for reduced contact resistance ͑R con ͒ through process optimization. Successful formation of Ni 1−x Al x alloy silicide with the use of film that has an Al concentration as high as 51% is shown. The onset of agglomeration has been eliminated, and the silicide yields a 0.40 eV electron barrier height, which is one of the lowest reported for any nickel alloy film. Subsequently, the benefits of the film using the optimal annealing condition are further verified through an 18% saturation drive current I D sat enhancement in n-channel metal-oxide-semiconductor field-effect transistors with Ni 1−x Al x silicide compared to NiSi. In addition, this paper also elucidates the dependency of Ni 1−x Al x alloy silicide properties on Al concentration and the annealing conditions.
Micro-Raman spectroscopy has been applied to study the solid-state reaction of Er on Si͑001͒ substrates. The Raman peaks observed at 204, 236, and 416 cm −1 were clearly established to be associated with the ErSi 1.7 phase. The Raman data correlates well with results from Rutherford backscattering and X-ray diffraction. The results were further utilized to show that Raman spectroscopy can be used to assess the quality of ErSi 1.7 formed, analogous to off-line electrical characterization techniques, for process monitoring. We demonstrate the potential of Raman spectroscopy as a process-monitoring tool to probe the formation of ErSi 1.7 in microelectronic devices so as to aid process development and integration.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.