Negative bias temperature instability in n-channel power VDMOSFETs

Danković, Danijel; Manić, I.; Davidović, V.; Djorić-Veljković, S.; Golubović, S.; Stojadinović, N.

doi:10.1016/j.microrel.2008.06.015

Cited by 27 publications

(13 citation statements)

References 13 publications

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“…Various semiconductor components are widely used as a radiation sensors and have many applications, such as PIN diodes [1], PIN photodiodes [2], phototransistors [3,4], Light-Dependent Resistors (LDR) [5], PMOS [6][7][8] and VDMOS transistors [9,10].…”

Section: Introductionmentioning

confidence: 99%

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Ilić

Jevtic

Stanković³

et al. 2020

Sensors

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This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

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Section: Introductionmentioning

confidence: 99%

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Ilić

Jevtic

Stanković³

et al. 2020

Sensors

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“…This suggests that applying a temperature treatment to HCD devices will not only recover P b -centers, but that relaxation/recovery of border/oxide traps also may take place. Furthermore, after stress and during annealing oxidedefects can be transformed into interface defects [19], clouding the exact recovery mechanism. The recovery of the different types of defects can be distinguished using the chargepumping (CP) technique [20,21].…”

Section: Introductionmentioning

confidence: 99%

Recovery after hot-carrier injection: Slow versus fast traps

Jong

Salm

Schmitz

2019

Microelectronics Reliability

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“…Although some may argue that n-channel power MOS transistors are less sensitive to NBTI, some studies suggested their serious NBTI degradation [21], [27], so this approach of investigation of simultaneous irradiation and NBT stress effects could be interesting and important for these devices as well.…”

Section: Resultsmentioning

confidence: 99%

NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

Davidović

Danković

Ilić

et al. 2016

IEEE Trans. Nucl. Sci.

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In this paper, we report the results of consecutive irradiation and negative bias temperature (NBT) stress experiments performed on p-channel power vertical double-diffused metal-oxide semiconductor transistors. The purpose is to examine the effects of a specific kind of stress in devices previously subjected to the other kind of stress, as well as to assess if possible the behavior of devices subjected to simultaneous irradiation and NBT stressing. It is shown that irradiation of previously NBT stressed devices leads to a further increase of negative threshold voltage shift due to additional build-up of both oxide trapped charge and interface traps. NBT stress effects in previously irradiated devices may, however, depend on gate bias applied during irradiation and on the total dose received: in the cases of low-dose irradiation or irradiation without gate bias, the subsequent NBT stress seems to lead to further device degradation, whereas in the cases of devices previously irradiated to high doses or with gate bias applied during irradiation, NBT stress seems to have a positive role since it practically anneals a part of radiation-induced degradation.Index Terms-Interface traps, irradiation effects, negative bias temperature instability (NBTI), oxide traps, power devices, thermal annealing, threshold voltage shift, VDMOSFET.

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Negative bias temperature instability in n-channel power VDMOSFETs

Cited by 27 publications

References 13 publications

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Recovery after hot-carrier injection: Slow versus fast traps

NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

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