Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor

Abstract

This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

“…The characteristics of X-ray beams, the mean energies and air kerma rates are given in Table 1. During irradiation, an automatic system for measuring the electrical transfer characteristics was used [26,30]. This system contains the custom-made switching and bias unit (SABU) [30], and for these experiments a specially designed printed circuit board with relays (PCBR) [26], in which the eight VDMOSFETs were placed, was implemented.…”

“…During irradiation, an automatic system for measuring the electrical transfer characteristics was used [26,30]. This system contains the custom-made switching and bias unit (SABU) [30], and for these experiments a specially designed printed circuit board with relays (PCBR) [26], in which the eight VDMOSFETs were placed, was implemented. The PCBR is connected with SABU via two DSUB cables-one DSUB-25 is for relay control, and the other DSUB-9 is for transistors biasing.…”

Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems

“…The floating-gate transistor, whose dielectric layer consists of a tunneling layer, a charge trapping layer, and a block layer, is widely employed as the basic structure of non-volatile memory [ 118 ]. Compared to the transistor with a single oxide dielectric layer, the charges can be stored in the charge-trapping layer without the need for any applied voltage [ 121 ].…”

“… Schematic diagram for the three typical prototypes for the synaptic transistors, floating-gate, ferroelectric, and electrolyte-gated transistors [ 115 , 116 , 117 , 118 , 119 , 120 ]. Reprinted/adapted with permission from Ref.…”

“…Reprinted/adapted with permission from Ref. [ 118 ] Ilić, 2020. Reprinted/adapted with permission from Ref.…”