Nature of the 0.111-eV acceptor level in indium-doped silicon

Baron, R.; Baukus, J. P.; Allen, S.; McGill, T. C.; Young, M. H.; Kimura, Hiroshi; Winston, Harvey; Marsh, O. J.

doi:10.1063/1.90772

Cited by 57 publications

(8 citation statements)

References 5 publications

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“…(6) No evidence was found for the presence of the 111 meV level associated with the In-C complex (7) or the supershallow level at 18 meV (8) which has been reported in In ion-implanted Si. (6) No evidence was found for the presence of the 111 meV level associated with the In-C complex (7) or the supershallow level at 18 meV (8) which has been reported in In ion-implanted Si.…”

Section: Introductionmentioning

confidence: 99%

Indium Ion Doping During Si Molecular Beam Epitaxy

et al. 1987

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A single-grid UIIV-compatible ion source was used to provide partially-ionized accelerated In+ dopant beams during Si growth by molecular beam epitaxy (MBE). Indium incorporation probabilities in 800 *C MBE Si(lO0). as measured by secondary ion mass spectrometry, ranged from < 10-5 (the detection limit) for thermal In to values of 0.02-0.7 for In+ acceleration energies El, between 50 and 400 eV. Temperature-dependent ltall-effect and resistivity measurements were carried out on Si films grown at 800 C with Eil = 200 eV. Indium was incorporated substitutionally in electrically active sites over the entire concentration range examined. 1 0 16--1 0 19 cm-3, with an acceptor level ionization energy of 165 meV. The 11I meV level associated with In-C complexes and the 18 meV "supershallow" level reported for In ion-implanted Si were not observed. Roomtemperature hole mobilities u2 were higher than both annealed In-ion-implanted Si and Irvin's values for bulk Si. Phonon scattering was found to dominate at temperatures between 100 and 330 K and /i varied as T-2 2 .

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Section: Introductionmentioning

confidence: 99%

Indium Ion Doping During Si Molecular Beam Epitaxy

et al. 1987

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“…Circle windows of 3.0 mm diameter centered in the squares were opened in the SiO 2 layer. 12 C ϩ was implanted in wafer II with a dose of 4ϫ10 15 cm Ϫ2 and energy of 50 keV. Subsequently,…”

Section: ͓S0021-8979͑99͒06622-0͔mentioning

confidence: 99%

“…Square Van der Pauw devices 16 of 6 mmϫ6 mm were fabricated on the wafers labeled I and II, using a conventional photolitography technique. The p ϩ ohmic contacts were prepared with B ϩ implantation (2ϫ10 15 cm Ϫ2 , 50 keV͒ followed by drive-in in an oxidizing ambient. Circle windows of 3.0 mm diameter centered in the squares were opened in the SiO 2 layer.…”

Section: ͓S0021-8979͑99͒06622-0͔mentioning

confidence: 99%

Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

Boudinov

Souza

Saul

1999

Journal of Applied Physics

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Electrical activation of In of 18%–52% of the implanted dose (5×1014 cm−2) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ≅0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers.

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“…In previous studies, indium doped silicon is often found to contain a shallower defect (sometimes called the “X‐centre”) at around E V + 0.11 eV . An initial study by Baron et al found this defect to scale with the total indium concentration, and to exist in float‐zone as well as Czochralski silicon thus probably ruling out the involvement of oxygen .…”

Section: Discussionmentioning

confidence: 99%

Minority carrier lifetime in indium doped silicon for photovoltaics

Murphy

Pointon

Grant

et al. 2019

Progress in Photovoltaics

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For photovoltaics, switching the p‐type dopant in silicon wafers from boron to indium may be advantageous as boron plays an important role in the light‐induced degradation mechanism. With the continuous Czochralski crystal growth process it is now possible to produce indium doped silicon substrates with the required doping levels for solar cells. This study aims to understand factors controlling the minority carrier lifetime in such substrates with a view to enabling the quantification of the possible benefits of indium doped material. Experiments are performed using temperature‐dependent Hall effect and injection‐dependent carrier lifetime measurements. The recombination rate is found to vary linearly with the concentration of un‐ionized indium which exists in the sample at room temperature due to indium's relatively deep acceptor level at 0.15 eV from the valence band. Lifetime in indium doped silicon is also shown to degrade rapidly under illumination, but to a level substantially higher than in equivalent boron doped silicon samples. A window of opportunity exists in which the minority carrier lifetime in degraded indium doped silicon is higher than the equivalent boron doped silicon, indicating it may be suitable as the base material for front contact photovoltaic cells.

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Nature of the 0.111-eV acceptor level in indium-doped silicon

Cited by 57 publications

References 5 publications

Indium Ion Doping During Si Molecular Beam Epitaxy

Indium Ion Doping During Si Molecular Beam Epitaxy

Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

Minority carrier lifetime in indium doped silicon for photovoltaics

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