The interdigitated back contact (IBC) solar cells developed at the Australian National University have resulted in an independently confirmed (Fraunhofer Institut für Solare Energiesysteme (ISE) CalLab) designated‐area efficiency of 24.4 ± 0.7%, featuring short‐circuit current density of 41.95 mA/cm2, open‐circuit voltage of 703 mV and 82.7% fill factor. The cell, 2 × 2 cm2 in area, was fabricated on a 230 µm thick 1.5 Ω cm n‐type Czochralski wafer, utilising plasma‐enhanced chemical vapour deposition (CVD) SiNx front‐surface passivation without front‐surface diffusion, rear‐side thermal oxide/low‐pressure CVD Si3N4 passivation stack and evaporated aluminium contacts with a finger‐to‐finger pitch of 500 µm. This paper describes the design and fabrication of lab‐scale high‐efficiency IBC cells. Characterisation of optical and electronic properties of the best produced cell is made, with subsequent incorporation into 3D device modelling used to accurately quantify all losses. Loss analysis demonstrates that bulk and emitter recombination, bulk resistive and optical losses are dominant and suggests a clear route to efficiency values in excess of 25%. Additionally, laser processing is explored as a means to simplify the manufacture of IBC cells, with a confirmed efficiency value of 23.5% recorded for cells fabricated using damage‐free deep UV laser ablation for contact formation. Meanwhile all‐laser‐doped cells, where every doping and patterning step is performed by lasers, are demonstrated with a preliminary result of 19.1% conversion efficiency recorded. Copyright © 2014 John Wiley & Sons, Ltd.

By studying the minority carrier lifetime in recently manufactured commercially available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we observe a very large reduction in the bulk lifetime when FZ silicon is heat‐treated in the range 450–700 °C. Photoluminescence imaging of these samples at the wafer scale revealed concentric circular patterns, with higher recombination occurring in the centre, and far less around the periphery. Deep level transient spectroscopy measurements indicate the presence of recombination active defects, including a dominant center with an energy level at ∼Ev + 0.5 eV. Upon annealing FZ silicon at temperatures >1000 °C in oxygen, the lifetime is completely recovered, whereby the defects vanish and do not reappear upon subsequent annealing at 500 °C. We conclude that the heat‐treatments at >1000 °C result in total annihilation of the recombination active defects. Without such high temperature treatments, the minority carrier lifetime in FZ silicon is unstable and will affect the development of high efficiency (>24%) solar cells and surface passivation studies.

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(2016) Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon. Physica Status Solidi A . Permanent WRAP URL: