The mechanisms controlling the degradation of p–i–n perovskite solar cells in reverse bias are identified using various optoelectronic and microstructural characterization techniques.

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The stability of the electrical isolation in n-type GaAs layers irradiated with ions of different mass is compared. The irradiations were performed with proper doses of 1 H ϩ , 4 He ϩ , or 11 B ϩ ions to create specific damage concentration level which lead to: ͑i͒ the trapping of practically all the carriers ͑R s Ϸ10 8 ⍀/ᮀ), ͑ii͒ the onset of hopping conduction ͑R s Ϸ10 8 ⍀/ᮀ), and ͑iii͒ a significant hopping conduction ͑R s Ϸ10 6 ⍀/ᮀ). Irrespectively of the ion mass, the temperature range for which the isolation is preserved, i.e., R s Ͼ10 8 ⍀/ᮀ, extends up to 200 or Ϸ 600°C, respectively, for the cases ͑i͒ and ͑ii͒. In case ͑iii͒, this range comprises temperatures from Ϸ 400 to 650°C. Annealing stages at 200 and 400°C recover in a great extent the conductivity and improve the carrier mobility in low dose irradiated samples ͓case ͑i͔͒. In samples irradiated to higher doses ͓cases ͑ii͒ and ͑iii͔͒, the conductivity recovers in a single stage.