Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a‐SrTiO₃) Memristors

Abstract

Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO3: a‐STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal‐oxide‐metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a‐STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (103–104) switching ratios, good endurance (>106I–V sweep cycles), and retention with less than 1% change in resistance over repeated 105 s long READ cycles. Nano‐contact studies utilizing in situ electrical nanoindentation technique reveal nanoionics driven switching processes that rely on isolatedly controllable nano‐switches uniformly distributed over the device area. Furthermore, in situ electrical nanoindentation studies on ultrathin a‐STO/metal stacks highlight the impact of mechanical stress on the modulation of non‐linear ionic transport mechanisms in perovskite oxides while confirming the ultimate scalability of these devices. These results highlight the promise of amorphous perovskite memristors for high performance CMOS/CMOL compatible memristive systems.

Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

“…The small memory window leads to read/write errors in the memory architecture [17,27]. The results associated with the LRS are in good agreement with the result reported by Nili et al [28]. However, the HRS results are not matching with the results in Ref.…”

“…However, the HRS results are not matching with the results in Ref. [28]. This is due to fact that the different physical mechanisms such as ionic [29], electrochemical [30], Joule heating [31], raising and lowering Schottky barriers [32] etc are getting associated with the memristor device.…”

Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

“…Two-and three-terminal resistive switching memories based on polymers, organic small molecules and ferroelectric materials have demonstrated impressive switching ratios of up to 10 8 and low programming voltages [23][24][25] . Unfortunately, this approach relies on two stable states of polarization and is therefore not well suited to use in multilevel memories 26 .…”

Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

“…ReRAM stores information as two resistance states: high resistance state (HRS) and low resistance state (LRS). Numerous materials such as organics45, binary oxides67, and perovskite oxides8910 have exhibited switchable resistance. Especially, ReRAMs based on inorganic perovskite oxide materials (e.g., Pr 0.7 Ca 0.3 MnO 3 (PCMO)8, SrTiO 3 (STO)9 and SrZrO 3 :Cr.…”