Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

Hwang, Bohee; Gu, Chungwan; Lee, Donghwa; Lee, Jang‐Sik

doi:10.1038/srep43794

Cited by 110 publications

(98 citation statements)

References 49 publications

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“…When a positive bias is applied to the Ag TE, negatively charged Br − ions migrate toward the TE and form a thin AgBr layer near the TE . Meanwhile, the bromide vacancies are created and accumulate from TE to BE until the V Br CFs are throughout the perovskite layer, and then the memory cell is switched to LRS . When a negative voltage is applied to the BE, the Br − ions stored near the Ag electrode migrate into the CsPbBr 3 film and recombine with V Br , leading to the rupture of V Br CFs, and the memory cell is switched back to HRS.…”

mentioning

confidence: 99%

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Zou

2019

Physica Rapid Research Ltrs

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Recently, metal halide perovskites have been widely used and considered as an alternative to oxides or chalcogenides in memory devices due to the high on–off ratio and low operating voltage, as well as ease of fabrication. However, most of the perovskite thin films in previous studies have been deposited by lab‐scale solution‐processed methods. They are not directly applicable to larger‐scale and volume manufacturing, hindering the commercialization of this technology. Herein, the performance of memory devices based on vacuum‐deposited inorganic perovskite (VDIP) is investigated for the first time. The optimized VDIP‐based memory devices exhibit reliable and reproducible resistive switching (RS) behaviors with a high on–off ratio (>100), low set/reset voltage (<2 V), and reversible RS by fast pulse‐voltage operations. Furthermore, the devices show an excellent ambient stability, and no obvious degradation is observed after storage in an ambient condition for 30 days. The memory devices on flexible substrates also show a good mechanical flexibility under a bending stress. In addition, a VDIP memory array with 16 × 16 memory cells on a large‐scale substrate is demonstrated, suggesting the strong potential of the VDIP for high‐density, large‐area storage devices.

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confidence: 99%

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Zou

2019

Physica Rapid Research Ltrs

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“…[9,16] These outstanding properties are suitable for next-generation resistive switching memories. [19][20][21] Another strategy is adopting a passivation layer on HP films, such as polymethyl methacrylate (PMMA), zinc oxide, and ethylene diamine, so as to isolate the films from the atmosphere and complement their defects. Even though conventional CBRAMs recorded over 10 6 cycles of endurance, halide perovskite based resistive switching devices exhibited around 10 3 cycles of endurance.…”

mentioning

confidence: 99%

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

Lee

Choi

Jeon

et al. 2018

Adv Elect Materials

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exhibit low-operation voltages, reduced power consumption, high on/off ratios, and remarkable mechanical flexibility. [9,16] These outstanding properties are suitable for next-generation resistive switching memories. However, the present HPbased resistive switching memories have critical weaknesses, such as short endurance and poor air-stability. Even though conventional CBRAMs recorded over 10 6 cycles of endurance, halide perovskite based resistive switching devices exhibited around 10 3 cycles of endurance. [17,18] To overcome these limitations, diverse solutions have been reported. One strategy is discovering and synthesizing more stable chemical compositions of HPs. To obtain stable resistive switching properties, various compositions of HPs have been investigated and reported. [19][20][21] Another strategy is adopting a passivation layer on HP films, such as polymethyl methacrylate (PMMA), zinc oxide, and ethylene diamine, so as to isolate the films from the atmosphere and complement their defects. [22][23][24][25] The other strategy is by improving the morphology of the HP films. In this regard, solvent engineering can be employed. By dripping antisolvents, such as toluene, benzene, and chlorobenzene, and adding hydroiodic acid solution as an additive in the precursor solution of HPs, morphologically uniform and high quality HP films [26][27][28][29] can be obtained. Nevertheless, these strategies still could not provide the fundamental solutions to the degradation mechanism, in which the devices are usually stuck in low resistance states (LRS, Figure S1, Supporting Information).We have been interested in the use of HPs for resistive switching devices because HP easily changes its composition and crystalline structure by a certain tolerance factor (t) value. [30,31] The methylammonium lead iodide (MAPbI 3 ) crystalline structure is a pseudocubic structure under ambient conditions. However, the MA + cation of MAPbI 3 in BX 6 octahedral void causes a disordered structure and exhibits hysteresis, which is an important factor in the resistive switching behavior. [32,33] Hence, MAPbI 3 is weak under ambient conditions because of the volatile MA + cation. On the other hand, the RbPbI 3 crystalline structure is orthorhombic, which is extremely stable under ambient conditions because of the less volatile Rb + cation and can be stabilized as a 1DRecently, halide perovskites (HPs), which exhibit resistive switching (RS) behaviors, are proposed as a promising candidate for next-generation memory because of their low power consumption, low cost, and mechanical flexibility. However, HP-based memories have crucial problems related to short endurance and vague switching mechanism. Here, the RS behaviors of switchable methylammonium lead iodide (MAPbI 3 ) and nonswitchable rubidium lead iodide (RbPbI 3 ) mixtures are reported and it is elucidated on the source of the switching phenomena. By controlling the ratio of rubidium iodide (RbI)/ methylammonium iodide (MAI), five compositions of the mixture of RbPbI 3 and MAPbI 3 ...

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“…Resistive‐switching memories (ReRAMs) demand fast operation time, large endurance, and low power voltage . A ReRAM consists of metal–insulator–metal structures and it operates according to a reversible resistive‐switching behavior between two stable resistance states, a high resistance state (HRS) and low resistance state (LRS), which form a conductive filament or bridge.…”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

“…Halide perovskites with defects have been studied to enhance carrier transport properties. For example, CH 3 NH 3 PbI 3− x Br x enhances carrier mobility and decreases the recombination rate; such characteristics in memory devices lead to low power consumption because of efficient charge transport . In 2015, Yoo et al reported a resistive‐switching effect using OHPs .…”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

“…Further, Br vacancies have a lower activation energy than I vacancies, which indicates that migration species can easily move in the halide perovskite films. As a result, the power consumption of the device was reduced and it exhibited an operating electric field of ≈3.44 × 10 4 V cm −1 , long retention time of over 10 4 s, and good endurance …”

Section: Applications Beyond Photovoltaicsmentioning

confidence: 99%

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Halide Perovskites for Applications beyond Photovoltaics

et al. 2018

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In recent years, halide perovskites have been attracting intense attention as novel materials for photovoltaic applications due to their high carrier mobility, extraordinarily long carrier diffusion lengths, and suitable optical bandgaps. Furthermore, there are extensive applications of halide perovskites owing to their exceptional attributes in different areas, such as light‐emitting diodes, lasers, X‐ray detectors, memory devices, and more. Here, the unique characteristics of halide perovskite materials are described, including their electrical and optical properties, to explain why these materials are so exciting for a wide variety of applications. After introducing the synthesis techniques used to prepare halide perovskite films, recent advances on the applications of halide perovskites beyond photovoltaics are addressed. The challenges to be overcome for several applications are described and it is suggested that halide perovskites are equivalent to a gold standard in developing next‐generation optoelectronic and electronic devices.

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Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

Cited by 110 publications

References 49 publications

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

Halide Perovskites for Applications beyond Photovoltaics

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Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

Cited by 110 publications

References 49 publications

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability

Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures

Halide Perovskites for Applications beyond Photovoltaics

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Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures