Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI₃, Orthorhombic RbPbI₃, and Their Mixtures

Abstract

exhibit low-operation voltages, reduced power consumption, high on/off ratios, and remarkable mechanical flexibility. [9,16] These outstanding properties are suitable for next-generation resistive switching memories. However, the present HPbased resistive switching memories have critical weaknesses, such as short endurance and poor air-stability. Even though conventional CBRAMs recorded over 10 6 cycles of endurance, halide perovskite based resistive switching devices exhibited around 10 3 cycles of endurance. [17,18] To overcome these limitations, diverse solutions have been reported. One strategy is discovering and synthesizing more stable chemical compositions of HPs. To obtain stable resistive switching properties, various compositions of HPs have been investigated and reported. [19][20][21] Another strategy is adopting a passivation layer on HP films, such as polymethyl methacrylate (PMMA), zinc oxide, and ethylene diamine, so as to isolate the films from the atmosphere and complement their defects. [22][23][24][25] The other strategy is by improving the morphology of the HP films. In this regard, solvent engineering can be employed. By dripping antisolvents, such as toluene, benzene, and chlorobenzene, and adding hydroiodic acid solution as an additive in the precursor solution of HPs, morphologically uniform and high quality HP films [26][27][28][29] can be obtained. Nevertheless, these strategies still could not provide the fundamental solutions to the degradation mechanism, in which the devices are usually stuck in low resistance states (LRS, Figure S1, Supporting Information).We have been interested in the use of HPs for resistive switching devices because HP easily changes its composition and crystalline structure by a certain tolerance factor (t) value. [30,31] The methylammonium lead iodide (MAPbI 3 ) crystalline structure is a pseudocubic structure under ambient conditions. However, the MA + cation of MAPbI 3 in BX 6 octahedral void causes a disordered structure and exhibits hysteresis, which is an important factor in the resistive switching behavior. [32,33] Hence, MAPbI 3 is weak under ambient conditions because of the volatile MA + cation. On the other hand, the RbPbI 3 crystalline structure is orthorhombic, which is extremely stable under ambient conditions because of the less volatile Rb + cation and can be stabilized as a 1DRecently, halide perovskites (HPs), which exhibit resistive switching (RS) behaviors, are proposed as a promising candidate for next-generation memory because of their low power consumption, low cost, and mechanical flexibility. However, HP-based memories have crucial problems related to short endurance and vague switching mechanism. Here, the RS behaviors of switchable methylammonium lead iodide (MAPbI 3 ) and nonswitchable rubidium lead iodide (RbPbI 3 ) mixtures are reported and it is elucidated on the source of the switching phenomena. By controlling the ratio of rubidium iodide (RbI)/ methylammonium iodide (MAI), five compositions of the mixture of RbPbI 3 and MAPbI 3 ...

Recent advances in organic‐based materials for resistive memory applications

“…Accompanying the progress toward high‐performance organic resistive memory devices, considerable endeavors have been dedicated to clarifying the underlying mechanisms of the switching characteristics. Although there still exist certain ambiguities, several referable memory mechanisms have been proposed on the basis of theoretical calculations and experimental analysis, which are closely correlated with the active materials and electrodes used in the devices 15,58‐61 . Here, we enumerate the most common and widely accepted switching mechanisms in the field of organic resistive memory devices, including charge transfer (CT), charge trapping, conformational change, redox reaction, and filamentary conduction (Figure 4).…”

“…In this section, we pay our attention to recent progress in OIP‐based resistive switching memories 37,52,58,215‐225 . Previous studies have revealed that two mechanisms, ionic migration and charge trapping/detrapping, can account for the resistive switching behaviors of OIPs, 218,219 which guided a series of materials design.…”

Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

“…On the basis of theoretical and experimental analysis, ion migration has been recognized as a reasonable mechanism in a variety of memristors, which is closely correlated with the active materials and electrodes used in the devices [38,56,57]. Mobile ions (cations and/or anions) can migrate through the active material with the assistance of external electric field.…”

“…For CB-RRAM, an electroforming process is often required to generate conduction filaments based on the migration of metal ions or particles, which is typically conducted by exerting a high voltage/current to the resistive switching device [56,57]. Nevertheless, the application of high voltage is not desirable for the low power consumption.…”

Bifunctional Silver-Doped ZnO for Reliable and Stable Organic–Inorganic Hybrid Perovskite Memory

“…In addition, HPs can react with the top electrode of RSM and form derivatives that can adversely affect the switching characteristics. 19,37 Thus, it is essential to introduce an additional layer that can prevent these phenomena.…”