Phosphor-converted white light-emitting diodes (pc-WLEDs) are efficient light sources used in lighting, high-tech displays, and electronic devices. One of the most significant challenges of pc-WLEDs is the thermal quenching, in which the phosphor suffers from emission loss with increasing temperature during high-power LED operation. Here, we report a blue-emitting NaSc(PO):xEu phosphor (λ = 453 nm) that does not exhibit thermal quenching even up to 200 °C. This phenomenon of zero thermal quenching originates from the ability of the phosphor to compensate the emission losses and therefore sustain the luminescence with increasing temperature. The findings are explained by polymorphic modification and possible energy transfer from electron-hole pairs at the thermally activated defect levels to the Eu 5d-band with increasing temperature. Our results could initiate the exploration of phosphors with zero thermal quenching for high-power LED applications.

Mixed halide perovskite materials are actively researched for solar cells with high efficiency. Their hysteresis which originates from the movement of defects make perovskite a candidate for resistive switching memory devices. We demonstrate the resistive switching device based on mixed-halide organic-inorganic hybrid perovskite CH3NH3PbI3−xBrx (x = 0, 1, 2, 3). Solvent engineering is used to deposit the homogeneous CH3NH3PbI3−xBrx layer on the indium-tin oxide-coated glass substrates. The memory device based on CH3NH3PbI3−xBrx exhibits write endurance and long retention, which indicate reproducible and reliable memory properties. According to the increase in Br contents in CH3NH3PbI3−xBrx the set electric field required to make the device from low resistance state to high resistance state decreases. This result is in accord with the theoretical calculation of migration barriers, that is the barrier to ionic migration in perovskites is found to be lower for Br− (0.23 eV) than for I− (0.29–0.30 eV). The resistive switching may be the result of halide vacancy defects and formation of conductive filaments under electric field in the mixed perovskite layer. It is observed that enhancement in operating voltage can be achieved by controlling the halide contents in the film.

Low-power operation of semiconductor devices is crucial for energy conservation. In particular, energy-efficient devices are essential in portable electronic devices to allow for extended use with a limited power supply. However, unnecessary currents always exist in semiconductor devices, even when the device is in its off state. To solve this problem, it is necessary to use switch devices that can turn active devices on and off effectively. For this purpose, high on/off current selectivity with ultra-low off-current and high on-current is required. Here, we report a novel switch behavior with over 10 9 selectivity, a high on-current density of 1 MA cm -2 , an ultra-low off-current density of 1 mA cm -2 , excellent thermal stability up to 250°C and abrupt turn-on with 5 mV per decade in solution-processed silver-doped zinc oxide thin films. The selection behavior is attributed to light doping of silver ions in zinc oxide films during electrochemical deposition to generate atomic-scale narrow conduction paths, which can be formed and ruptured at low voltages. Device simulation showed that the new selector devices may be used in ultra-highdensity memory devices to provide excellent operation margins and extremely low power consumption.

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