All-inorganic cesium lead bromide (CsPbBr 3 ) perovskite quantum dots (QDs) have recently emerged as highly promising solution-processed materials for nextgeneration light-emitting applications. They combine the advantages of QD and perovskite materials, which makes them an attractive platform for achieving high optical gain with high stability. Here, we report an ultralow lasing threshold (0.39 μJ/cm 2 ) from a hybrid vertical cavity surface emitting laser (VCSEL) structure consisting of a CsPbBr 3 QD thin film and two highly reflective distributed Bragg reflectors (DBRs). Temperature dependence of the lasing threshold and longterm stability of the device were also characterized. Notably, the CsPbBr 3 QDs provide superior stability and enable stable device operation over 5 h/1.8 × 10 7 optical pulse excitations under ambient conditions. This work demonstrates the significant potential of CsPbBr 3 perovskite QD VCSELs for highly reliable lasers, capable of operating in the short-pulse (femtosecond) and quasi-continuous-wave (nanosecond) regimes.

Perovskite light-emitting diodes (PeLEDs) have undergone rapid development in the last several years with external quantum efficiencies (EQEs) reaching over 21%. However, most PeLEDs still suffer from severe efficiency roll-off (droop) at high injection current densities, thus limiting their achievable brightness and presenting a challenge to their use in laser diode applications. In this work, we show that the roll-off characteristics of PeLEDs are affected by a combination of charge injection imbalance, nonradiative Auger recombination, and Joule heating. To realize ultrabright and efficient PeLEDs, several strategies have been applied. First, we designed an energy ladder to balance the electron and hole transport. Second, we optimized perovskite materials to possess reduced Auger recombination rates and improved carrier mobility. Third, we replaced glass substrates with sapphire substrates to better dissipate joule heat. Finally, by applying a current-focusing architecture, we achieved PeLEDs with a record luminance of 7.6 Mcd/m2. The devices can be operated at very high current densities (J) up to ∼1 kA/cm2. Our work suggests a broad application prospect of perovskite materials for high-brightness LEDs and ultimately a potential for solution-processed electrically pumped laser diodes.

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Metal halide perovskites are emerging as attractive materials for light-emitting diode (LED) applications. The external quantum efficiency (EQE) has experienced a rapid progress and reached over 21%, comparable to the state of the art organic and quantum dot LEDs. For metal halide perovskites, their simple solution-processing preparation, facile band gap tunability, and narrow emission line width provide another attractive route to harness their superior optoelectronic properties for multicolor display applications. In this work, we demonstrate a high-resolution, large-scale photolithographic method to pattern multicolor perovskite films. This approach is based on a dry lift-off process which involves the use of parylene as an intermediary and the easy mechanical peeling-off of parylene films on various substrates. Using this approach, we successfully fabricated multicolor patterns with red and green perovskite pixels on a single substrate, which could be further applied in liquid crystal displays (LCDs) with blue backlight. Besides, a prototype green perovskite micro-LED display under current driving has been demonstrated.