Ultrastable near-infrared perovskite light-emitting diodes

Guo, Binbin; Lai, Runchen; Jiang, Sijie; Zhou, Longjiang; Ren, Zhixiang; Lian, Yaxiao; Li, Puyang; Cao, Xuhui; Xing, Shiyu; Wang, Yaxin; Li, Weiwei; Zou, Chen; Chen, Mengyu; Hong, Zijian; Li, Cheng; Zhao, Baodan; Di, Dawei

doi:10.1038/s41566-022-01046-3

Cited by 187 publications

(190 citation statements)

References 50 publications

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“…Recently, metal halides have gained significant research interest in phosphor conversion light‐emitting diodes (LEDs) because of their extraordinary luminescence features such as tunable emission, high color purity and high photoluminescence quantum yield (PLQY) 1–6 . Despite the rapid progress of metal halides in LEDs, 7–14 the actual commercialization of the emerging materials also suffer with some unavoidable problems that is, toxicity element of Pb and instability under ambient moisture, oxygen, ultraviolet (UV) light and heat 3,15,16 . Such challenges motivate researchers to explore environmental friendly and stable metal halides.…”

Section: Introductionmentioning

confidence: 99%

High quantum yield of In‐based halide perovskites for white light emission and flexible x‐ray scintillators

Liang

Liu

Luo

et al. 2022

EcoMat

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In-based halides always present low photoluminescence quantum yield (PLQY) because of poor absorption, limiting their potential applications inluminescence-related fields. In this work, zero-dimensional MA 4 InCl 7 [MA + :-CH 3 NH 3 + ] halides with different Sb 3+ doping level are prepared through solvent evaporating method. The Sb 3+ -doped MA 4 InCl 7 shows a broadband yellow emission with full width at half-maximum of 180 nm and a high PLQY of 84%. Such broadband emission originates from the self-trapped excitons demonstrated by experimental results and theoretical calculations. Additionally, the Sb 3+ -doped MA 4 InCl 7 is further employed to fabricate white-lightemitting diodes, which possesses high color rendering index of 91 and excellent operating stability up to 400 h. Moreover, flexible Sb 3+ -doped MA 4 InCl 7 films are also prepared as x-ray scintillators, exhibiting low detection limit of 63.3 nGy air /s and high spatial resolution of 10.0 lp/mm. Thus, this work provides guidance to design perovskite-based devices with bright luminescence and x-ray detection with excellent flexibility.indium-based halides, photoluminescence, Sb 3+ doping, white light-emitting diodes, x-ray scintillators | INTRODUCTIONRecently, metal halides have gained significant research interest in phosphor conversion light-emitting diodes (LEDs) because of their extraordinary luminescence features such as tunable emission, high color purity and high photoluminescence quantum yield (PLQY). [1][2][3][4][5][6] Despite the rapid progress of metal halides in LEDs, 7-14 the actual commercialization of the emerging materials also suffer with some unavoidable problems that is, toxicity element of Pb and instability under ambient moisture, oxygen, ultraviolet (UV) light and heat. 3,15,16 Such challenges motivate researchers to explore environmental friendly and stable metal halides.

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Section: Introductionmentioning

confidence: 99%

High quantum yield of In‐based halide perovskites for white light emission and flexible x‐ray scintillators

Liang

Liu

Luo

et al. 2022

EcoMat

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“…Metal halide perovskites have gained tremendous attention for applications in light-emitting diodes (LEDs), [1][2][3][4][5][6][7][8] due to their distinctive optical and electrical properties. [9][10][11] Of particular is required to improve the performance of perovskite LEDs.…”

Section: Introductionmentioning

confidence: 99%

A Spacer Cation Assisted Nucleation and Growth Strategy Enables Efficient and High‐Luminance Quasi‐2D Perovskite LEDs

Kong

Luo

Turyanska

et al. 2022

Adv Funct Materials

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Quasi-2D Ruddlesden-Popper perovskites receive tremendous attention for application in light-emitting diodes (LEDs). However, the role of organic ammonium spacers on perovskite film has not been fully-understood. Herein, a spacer cation assisted perovskite nucleation and growth strategy, where guanidinium (GA + ) spacer is introduced into the perovskite precursor and at the interface between the hole transport layer (HTL) and the perovskite, to achieve dense and uniform perovskite films with enhanced optical and electrical performance is developed. A thin GABr interface pre-formed on HTL provides more nucleation sites for perovskite crystal; while the added GA + in perovskite reduces the crystallization rate due to strong hydrogen bonding interacts with intermediates, which promotes the growth of enhanced-quality quasi-2D perovskite films. The ionized ammonium group (NH 3 +) of GA + also favors formation of polydisperse domain distribution, and amine or imine (NH 2 or NH) group interact with perovskite defects through coordination bonding. The spacer cation assisted nucleation and growth strategy is advantageous for producing efficient and high-luminance perovskite LEDs, with a peak external quantum efficiency of over 20% and a luminance up to 100 000 cd m −2 . This work can inform and underpin future development of high-performance perovskite LEDs with concurrent high efficiency and brightness.

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“…These essential outstanding properties enable perovskites to be a fierce competitor of other commercial light emitters, such as organic emitters, III–V inorganic semiconductors, and colloidal quantum dots 5 . Owing to excellent perovskite film quality and appropriate device structures, near-infrared PeLEDs have made significant breakthroughs and yielded external-quantum efficiencies (EQE) up to 22.8% in the last few years 1 , 6 – 14 .…”

Section: Introductionmentioning

confidence: 99%

Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

et al. 2022

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Formamidinium lead iodide (FAPbI3) perovskites are promising emitters for near-infrared light-emitting diodes. However, their performance is still limited by defect-assisted nonradiative recombination and band offset-induced carrier aggregation at the interface. Herein, we introduce a couple of cadmium salts with acetate or halide anion into the FAPbI3 perovskite precursors to synergistically passivate the material defects and optimize the device band structure. Particularly, the perovskite analogs, containing zero-dimensional formamidinium cadmium iodide, one-dimensional δ-FAPbI3, two-dimensional FA2FAn-1PbnI3n+1, and three-dimensional α-FAPbI3, can be obtained in one pot and play a pivotal and positive role in energy transfer in the formamidinium iodide-rich lead-based perovskite films. As a result, the near-infrared FAPbI3-based devices deliver a maximum external quantum efficiency of 24.1% together with substantially improved operational stability. Combining our findings on defect passivation and energy transfer, we also achieve near-infrared light communication with device twins of light emitting and unprecedented self-driven detection.

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Ultrastable near-infrared perovskite light-emitting diodes

Cited by 187 publications

References 50 publications

High quantum yield of In‐based halide perovskites for white light emission and flexible x‐ray scintillators

High quantum yield of In‐based halide perovskites for white light emission and flexible x‐ray scintillators

A Spacer Cation Assisted Nucleation and Growth Strategy Enables Efficient and High‐Luminance Quasi‐2D Perovskite LEDs

Synergistic passivation and stepped-dimensional perovskite analogs enable high-efficiency near-infrared light-emitting diodes

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