Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

Dongale, Tukaram D.; Khot, Kishorkumar V.; Mohite, S.V.; Desai, N. B.; Shinde, S.S.; Patil, Vithoba L.; Vanalkar, S. A.; Moholkar, A.V.; Rajpure, K.Y.; Bhosale, Popatrao N.; Patil, Pramod S.; Gaikwad, P. K.; Kamat, Rajanish K.

doi:10.1007/s40089-017-0217-z

Cited by 34 publications

(17 citation statements)

References 34 publications

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“…The I – V , endurance and retention characteristics suggested the abrupt transition between two switching states (LRS and HRS) occurs in the Ag/Melanin/SS memristive device. The abrupt transition occurs only where the domination of filamentary conduction mechanism . In the present case, electron (free radical), as well as H + and OH − mobile ions, may be produced due to comproportionation reaction, where OH − mobile ion is considered as a proton hole, formed due to water molecules and hydrophilic residues .…”

Section: Resultsmentioning

confidence: 76%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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A Ag/melanin/SS memristive device with remarkably good endurance and retention properties is demonstrated using natural melanin isolated from bacterium Aeromonas sp. SNS. Purified and characterized melanin is used for the development of a non‐volatile memory device. The device is operated under electroforming‐free mode and requires only ±0.6 V resistive switching voltage. 2 × 104 switching cycles endurance is achieved with an approximately 10X memory window at 0.2 V read voltage. In addition to this, the low resistance state (LRS) and high resistance state (HRS) are stable over 103 s without any observable degradation in the resistance states. Standard deviation and coefficient of variation of LRS and HRS are very small compared to other memory devices reported in the literature. Furthermore, the Ag/melanin/SS memristive device shows rich nonlinear behavior and possesses negative differential resistance effect during positive bias. Charge transportation in the device is due to the ohmic and space charge limited current. The formation and breaking of the conductive filament are responsible for the bipolar resistive switching effect due to hybrid electronic‐ionic charge transportation. Rich I–V characteristics, very low switching voltage, and remarkable nonvolatile memory performance make melanin a strong candidate for next generation organic non‐volatile memory devices.

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Section: Resultsmentioning

confidence: 76%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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“…Sweep voltages with smaller frequency tend to have larger memory window, which is one of the significant performance factors and such kind of high‐memory window is required for practical applications. [ 47–50 ] From Equation (), the high‐memory window can be correlated to longer liquid displacement in nanochannel, which inspires us to explore the physical picture behind the frequency response by taking account different interface displacements.…”

Section: Resultsmentioning

confidence: 99%

Nanochannel‐Based Interfacial Memristor: Electrokinetic Analysis of the Frequency Characteristics

Chen

Tsutsui

Zhuge

et al. 2021

Adv Elect Materials

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As a novel class of memristors, nanochannel‐based interfacial memristors in polydimethylsiloxane offer great flexibility and low cost. With practical attributes of novel transport phenomenon in nanofluidics, analysis of the physical properties and operational mechanisms in such memristor devices is possible. Made of pure soft‐matter materials, this type of device exhibits facile tuning of device conductance via the modification of solution interface positions. Under continuous sweep voltage, a typical hysteresis loop for a memristor can be observed. In this article, the dynamic frequency characteristics of this device is measured, which is regarded as a typical memristor characteristic as previously predicted. However, the physical mechanism behind such memristive behaviors and frequency characteristics is seldomly reported. Generalizing conventional physical models, here a comprehensive model including continuous voltage changes and surface tension modifications is proposed, which is able to predict the interface position changes and explain the conductance switching and frequency property experimentally observed in the device. Provided with a probable explanation of the physical mechanism behind this class of device, the model can serve as a candidate method in designing new nanochannel‐based structures or materials, aiming at more novel functionalities in neuromorphic computation.

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“…The resistance ( R 2 ) and capacitance ( C 2 ) corresponded to the semicircle at high frequencies (10 3 to 10 4 Hz) of the interface between the APP film and the electrodes in an approaching linear pinched‐loop, as previously reported. [ 47 ]…”

Section: Resultsmentioning

confidence: 99%

All‐Inorganic Ionic Polymer‐Based Memristor for High‐Performance and Flexible Artificial Synapse

Zhao

Sun

Wang

et al. 2020

Adv Funct Materials

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The implementation of memristors that are wearable and transparent has attracted significant attention. However, the development of high-performance memristors that simultaneously possess high flexibility and environmental stability has remained a tremendous challenge suffering from limited choice of materials with both good ion-electron mobility and structural flexibility. Inspired by the unique poly-ionic nature of ammonium polyphosphate (APP), a novel Au/APP/ITO memristor with favorable flexibility and stability is prepared. Synaptic behaviors can be stimulated by voltage pulses that are 20 ns in width, 0.1 V in amplitude, and repeatable under 10 4 pulse cycles, thereby outperforming several other benchmark memristors. Further, the device, prepared on conductive silicone, can sustain its synaptic performance even under 360° bending. Furthermore, the device can sustain its synaptic behaviors even after exposure to fire for 60 s and 5.6 kGy of ionic irradiation. Additionally, APP is determined to be nontoxic, biodegradable, and transparent when compared with all the organics and inorganics used in previous memristors. The results of this study will inspire the development of more inorganic polymers for their utilization in future environmentally stable and flexible electronics.

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Effect of write voltage and frequency on the reliability aspects of memristor-based RRAM

Cited by 34 publications

References 34 publications

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Nanochannel‐Based Interfacial Memristor: Electrokinetic Analysis of the Frequency Characteristics

All‐Inorganic Ionic Polymer‐Based Memristor for High‐Performance and Flexible Artificial Synapse

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