Monolithically integrated InP-based front-end photoreceivers

GaAs and InP selective molecular-beam epitaxy

“…6 We report here the first successful monolithic integration of pseudomorphic InGaAs-GaAs HEMTs and GaAs-AlGaAs HBTs in the same microwave circuit using selective molecular beam epitaxy and a novel merged processing technology. Epitaxial regrowth for FET-HBT 5 and PIN-HEMT integration has also been reported.…”

Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications

“…The availability of media-access-control (MAC) chipsets that include encoding-decoding functionality and deskewing circuitry means that the most important issues governing the development of the photoreceiver front-end is increasing its bandwidth while reducing size, cost and thermal dissipation [2]. Transimpedance (TZ) amplifiers have been widely used to convert the detected photocurrent to the voltage levels necessary for driving successive logic stages and designers have traditionally turned to costly III-V group technologies for the implementation of high-bandwidth TZ amplifier stages [3], [4] but the emerging availability of deep-submicron CMOS technologies offer a cheaper alternative with the added advantage of complete monolithic integration with subsequent CMOS logic circuitry. Bandwidth-enhancements by the application of a capacitive peaking technique to simple CMOS TZ amplifiers have been reported [5], [6] but these amplifiers still rely on linear operation to detect the large-signal pulsed inputs typical of photonic communication systems.…”