GaAs and InP selective molecular-beam epitaxy

Streit, D.C.; Block, Thomas; Han, A.C.; Wójtowicz, M.; Umemoto, D.K.; Kobayashi, K.W.; Oki, A.K.; Liu, Po‐Hsin; Lai, R.; Ng, G. I.

doi:10.1116/1.588160

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GaAs and InP selective molecular-beam epitaxy

Abstract: Articles you may be interested inSelective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features

Cited by 4 publications

References 1 publication

Analysis of in-situ etched and regrown interfaces

Analysis of in-situ etched and regrown interfaces

Shadow mask technology

An InP HEMT W-band amplifier with monolithically integrated HBT bias regulation

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