Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers

Seifried, Marc; Villares, Gustavo; Baumgartner, Yannick; Hahn, Hernsoo; Halter, Mattia; Horst, Folkert; Caimi, Daniele; Caër, Charles; Sousa, Marilyne; Dangel, R.; Czornomaz, Lukas; Offrein, Bert Jan

doi:10.1109/jstqe.2018.2832654

Cited by 29 publications

(20 citation statements)

References 28 publications

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“…Most importantly, cw and pulsed laser operation with ultra-low lasing thresholds of 0.8-1.1 kW cm −2 are demonstrated. These values are significantly lower than any value reported for group-IV lasers, and are even comparable to those for epitaxially grown III-V InP laser 41 , or InGaAs lasers bonded on Si wafers 42 , albeit the latter operate at room temperature. This achievement relies on using dilute GeSn alloys with just 5.4 at.…”

Section: Resultsmentioning

confidence: 46%

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

et al. 2020

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GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at. % Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiN x stressor layer to produce tensile strain. A 300 nm GeSn layer with 5.4 at. % Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of −0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 µm have thresholds as low as 0.8 kW cm −2 for ns-pulsed excitation, and 1.1 kW cm −2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform. arXiv:2001.04927v1 [physics.app-ph] 14 Jan 2020 at an Sn concentration of 8 at. % 3 . The lattice mismatch between Sn-containing alloys and the Ge buffer layer, the typical virtual substrate for their epitaxial growth, generates compressive strain in the grown layer, which counteracts the effect of Sn incorporation, decreasing the directness ∆E L−Γ = E L − E Γ . On the contrary, applying tensile strain will increase the directness. Finding a proper balance between a moderate Sn content to minimize crystal defects and to maintain thermal stability of the GeSn alloy on one hand and making use of tensile strain on the other hand are the keys to bring lasing threshold and operation temperature close to application's requirements. The mainstream research to increase ∆E L−Γ focuses on high Sn content alloys 5, 12 , obtained by epitaxy of thick strain-relaxed GeSn layers. A large directnesss is obtained, leading to higher temperature operation, although at the expense of steadily increasing laser threshold 13 . We have recently theoretically proposed an alternative approach, which is based on two key ingredients: employing moderate Sn content GeSn alloys, and inducing tensile strain in them 14 . This study indicated that, if a given directness is reached via tensile strain rather than by increasing Sn content, the material can provide a higher net gain. The underlying physics originates in the valence band splitting and lifting up of the light hole, LH, band above the heavy hole, HH, band. Its lower density of states (DOS) reduces the carrier density required for transparency, hence reduces the lasing threshold, as will be shown below. GeSn alloys with a moderate Sn content offer a couple of ...

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Section: Resultsmentioning

confidence: 46%

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

et al. 2020

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“…To this end, a potential on-board layout of the 40 Gb/s C2C interconnect will probably eliminate the need for SOAs in the transmission lines, turning C2C energy consumption into a parameter that depends solely on the power requirements of the RM and its respective electronic driver, the PD-TIA and the external LD that feeds the RM with the CW optical beam. Considering the employment of state-ofthe-art RM drivers [138] and assuming an LD with 6.1 dBm output power and a 10% wall-plug efficiency, the energy efficiency of the proposed 40 Gb/s C2C photonic link was estimated at 5.95 pJ/bit that increases to 6.25 pJ/bit when incorporating also state-of-the-art SerDes [139] , assuming a LD-to-RM coupling loss of 3dB [140], a RM insertion loss of 1.5 dB, 0.5dB for every Silicon-to-polymer and polymer-to-Silicon waveguide coupling [131] and an AWGR channel insertion loss of 6dB [135]. These energy efficiency values suggest a 63.3% and 61.4% improvement, respectively, compared to the 16.2 pJ/bit link energy efficiency of Intel QPI [134].…”

Section: A 40 Gb/s C2c Experimental Setup and Resultsmentioning

confidence: 99%

Optics in Computing: From Photonic Network-on-Chip to Chip-to-Chip Interconnects and Disintegrated Architectures

Alexoudi

Terzenidis

Pitris

et al. 2019

J. Lightwave Technol.

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“…For the co-integration of the light source and the gain material, we explored a novel approach that goes beyond today's established III-V on silicon photonics concepts [23]. We embed the III-V layer in between the front-and back-end of the line of the silicon stack while the laser feedback structures are integrated into the silicon waveguide layer [24]. This will enable a monolithic co-integration of passive and active photonic functions together with electrical (Bi)CMOS circuits.…”

Section: Light Sourcesmentioning

confidence: 99%

Co-Package Technology Platform for Low-Power and Low-Cost Data Centers

Papatryfonos

Selviah

Maman³

et al. 2021

Applied Sciences

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We report recent advances in photonic–electronic integration developed in the European research project L3MATRIX. The aim of the project was to demonstrate the basic building blocks of a co-packaged optical system. Two-dimensional silicon photonics arrays with 64 modulators were fabricated. Novel modulation schemes based on slow light modulation were developed to assist in achieving an efficient performance of the module. Integration of DFB laser sources within each cell in the matrix was demonstrated as well using wafer bonding between the InP and SOI wafers. Improved semiconductor quantum dot MBE growth, characterization and gain stack designs were developed. Packaging of these 2D photonic arrays in a chiplet configuration was demonstrated using a vertical integration approach in which the optical interconnect matrix was flip-chip assembled on top of a CMOS mimic chip with 2D vertical fiber coupling. The optical chiplet was further assembled on a substrate to facilitate integration with the multi-chip module of the co-packaged system with a switch surrounded by several such optical chiplets. We summarize the features of the L3MATRIX co-package technology platform and its holistic toolbox of technologies to address the next generation of computing challenges.

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Monolithically Integrated CMOS-Compatible III–V on Silicon Lasers

Cited by 29 publications

References 28 publications

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Optics in Computing: From Photonic Network-on-Chip to Chip-to-Chip Interconnects and Disintegrated Architectures

Co-Package Technology Platform for Low-Power and Low-Cost Data Centers

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