Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

Roldán, J.B.; Godoy, A.; Gamiz, F.; Balaguer, Mark

doi:10.1109/ted.2007.911096

Cited by 76 publications

(63 citation statements)

References 27 publications

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“…Subthreshold conduction is dominated by the diffusion current and is given bypresented in [26,38] Jðr; zÞ ¼ À m 0 n 1 þ qðV GS À V Th Þ qn min ðr; zÞ dVðzÞ dz (27) Where n min ¼ n i e f 0 S;min ÀV =VT , Substituting this value of the inversion charge carriers…”

Section: Current Modelmentioning

confidence: 99%

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Pal

Sarkar

2014

Engineering Science and Technology, an International Journal

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a b s t r a c tIn this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET (DMSG) by solving the Poisson equation has been proposed and verified using ATLAS TCAD device simulator. Analytical modeling of parameters like threshold voltage, surface potential and Electric field distribution is developed using parabolic approximation method. A comparative study of the SCEs for DMSG and SMSG device structures of same dimensions has been carried out. Result reveals that DMSG MOSFET provides higher efficacy to prevent short-channel effects (SCEs) as compared to a conventional SMSG MOSFET due to the presence of the perceivable step in the surface potential profile which effectively screen the drain potential variation in the source side of the channel. A nice agreement between the results obtained from the model and the results obtained from numerical TCAD device simulator provides the validity and correctness of the developed model.

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Section: Current Modelmentioning

confidence: 99%

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Pal

Sarkar

2014

Engineering Science and Technology, an International Journal

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“…But in the quantum mechanical case, the electrons are distributed more toward the center of the silicon body. Based on [14], the expression of inversion-charge density is given in (8).…”

Section: Compact Surrounding Gate Mosfet Modelmentioning

confidence: 99%

“…Mathematical complexities of the above models are impractical for compact modeling. Roldan [14] have developed a model for centroid and inversion charge of Surrounding Gate MOSFETs including quantum effects. The wave functions as a function of different device parameters were obtained from the numerical simulator used by them.…”

Section: Introductionmentioning

confidence: 99%

A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-k Dielectrics

Vimala¹,

Balamurugan²

2014

Journal of Electrical Engineering and Technology

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-In this paper, an analytical model for Surrounding Gate (SG) metal-oxide-semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.

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“…Both square and cylindrical Gate-All-Around (GAA) MOSFETs are currently under intense study from the simulation and modeling viewpoint [3,[8][9][10][11][12][13][14][15][16][17]. One key area in these structures is the study of quantum mechanical effects (QMEs), since both structural and electrical confinement (produced by a square gate in the quadruple-gate device and by a circular gate in the cylindrical one) make these devices (nanowires FETs) quasi-1D transistors, where transport occurs in a set of loosely coupled propagating modes.…”

Section: Introductionmentioning

confidence: 99%

An analytical model for square GAA MOSFETs including quantum effects

Moreno

Roldán

Ruiz

et al. 2010

Solid-State Electronics

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Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

Cited by 76 publications

References 27 publications

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)

A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-k Dielectrics

An analytical model for square GAA MOSFETs including quantum effects

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