A Compact Quantum Model for Cylindrical Surrounding Gate MOSFETs using High-k Dielectrics

Abstract

-In this paper, an analytical model for Surrounding Gate (SG) metal-oxide-semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.

Study of a New Device Structure: Graphene Field Effect Transistor (GFET)

“…It is also concluded that Moore's law is inappropriate since it was practically found that we cannot further reduce the channel length [4]. Efforts are being made to reduce the shortchannel effects which have led to the discovery of other nanodevices such as MUGFET [5][6][7], FinFET [8], tunnel FET [9], nanowire TFET [10], and so on. The need for high accuracy in bonding and reactions at the atomic level fits graphene for this role [11,12].…”

A Simulation Study on the Impact of InP Barrier on InGaAs/InP Hetero Junction Gate all around MOSFET

“…In a recent study, the asymmetric behavior of the heterostructure under lap double gate MOSFET was analyzed extensively. Until now, researchers have been mainly investigating different aspects of InGaAs-channel MOSFETs for digital applications and for analog/mixed-signal applications [10][11][12]. The impact of different barrier layers on the analog performance and digital performance of an InGaAs MOSFET was also investigated.…”