2005
DOI: 10.1109/temc.2005.851719
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Modeling of Power Supply Noise in Large Chips Using the Circuit-Based Finite-Difference Time-Domain Method

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Cited by 36 publications
(17 citation statements)
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“…Simple as it is, the non-linearity of the I/O buffer is ignored and the negative feedback effect of the driver circuitry cannot be captured [5], [19]. The negative feedback effect is important, for example when we consider the relationship between SSN and the number of switching I/O buffers: It results in a sub-linear function that will saturate as shown in Fig.…”
Section: Chip Modelingmentioning
confidence: 99%
“…Simple as it is, the non-linearity of the I/O buffer is ignored and the negative feedback effect of the driver circuitry cannot be captured [5], [19]. The negative feedback effect is important, for example when we consider the relationship between SSN and the number of switching I/O buffers: It results in a sub-linear function that will saturate as shown in Fig.…”
Section: Chip Modelingmentioning
confidence: 99%
“…Hence, the burden is on the packaging community to ensure that the package power distribution models interface well with the on-chip power distribution tools. Some aspects of chip-package co-simulation is available in [53]. In [44], the models in [53] have been extended for analytically extracting the parasitics of the on-chip power distribution through conformal mapping and simulation of the noise voltage using FDTD method.…”
Section: Modeling Of Power Distribution Networkmentioning
confidence: 99%
“…An important parameter for wafer level packaging to be attractive is the loop inductance between the voltage and ground rails, which is dictated by the compliant (or rigid) interconnect length and pitch. Preliminary simulations [53] based on ITRS 2005 (and beyond) indicate an inductance of 50 pH per interconnection for 5% noise tolerance on a 100-200-m pitch. In [53], the power supply noise was simulated for various interconnect technologies with inductances in the range 20 pH-2 nH to determine the optimum inductance required for the ITRS'05 node.…”
Section: System On a Package Technologiesmentioning
confidence: 99%
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“…New architectures are being proposed for supporting terabit data rate speeds between processors (such as by Hofstee in this issue [10]. In addition, for memory channel, interconnection speeds greater than 3.2 Gb/s are being developed [11]. For the first time, the International Technology Roadmap on Semiconductors (ITRS) [12] is proposing the convergence of on-chip and off-chip clock speeds, with a goal of 5 GHz clock speed in the near future.…”
Section: Digital Sop: Design and Fabricationmentioning
confidence: 99%