Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Abstract

Multiwafer Planetary Reactor is a promising system for large-scale production of heterostructures for LED's based on III-group nitrides. Analysis of chemical processes occurring in the reactor allows one to get insight into specific mechanisms governing growth of nitride based heterostructures. In the present paper results of modeling analysis of MOVPE of In x Ga 1-x N layers in AIX-200 Reactor and AIX 2000 HT Planetary Reactor are reported. The model used for MOVPE process analysis accounts for gas flow, heat transfer, and multicomponent mass transport along with gas phase and surface chemical reactions. Results of the modeling analysis of In transport and incorporation into the solid phase are compared with experimental data. It is shown that the model predicts reasonably well the In incorporation during MOVPE of InGaN under In/(In+Ga) ratio in the gas phase less than 20%.

Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

“…Our experimental setup represents a production scale multiwafer (6 Â 2 00 ) Planetary Reactor AIX2000HT [1]. The group-III precursors trimethylaluminum (TMAl) and trimethylgallium (TMGa) are injected into the reactor chamber through the upper inlet.…”

Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets

“…While most of the studies on transport phenomena concentrated on the conventional horizontal and vertical reactors, fewer were concerned with radial flow reactors which have been widely adopted by both researchers and industry in recent years [7][8][9][10][11][12][13]. The radial flow MOCVD reactors, firstly proposed by Frijlink [7,8] and quickly commercialized as AIXTRON Planetary Reactors [9][10][11][12][13], are especially suited for largescale production of heterostructures of compound semiconductor devices. In the Planetary Reactor, reactant gases enter two concentric inlets at the top, flowing down vertically into the reactor chamber.…”

“…Since the invention of the radial flow MOCVD reactor, most published results [7][8][9][10][11] claimed that this type of reactor has uniformly layered flow and temperature patterns above the susceptor. For those claims to be true, it requires a critical height to abide by the reactor chamber, below which the flow is uniformly layered without recirculation cells.…”

A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride

“…There are several instances in the literature where equilibrium calculations have been used to predict growth [7][8][9][10][11][12][13][14][15][16][17][18]. Notably, the Japanese group around Koukitu and Seki [7][8][9][10][11][12] has performed extensive thermodynamic analysis of III-V binary, ternary and quaternary alloys.…”

“…This approach severely limits the predictive ability of their models. The Russian group around Karpov [15][16][17] has assumed that some reactions are not in equilibrium and are kinetically limited, and formulations have been proposed to mix equilibrium reactions with kinetic steps (similar to Langmuir-Hinshelwood kinetics). While all of these approaches have yielded reasonably good agreement with experimental data, in all cases, a set of equilibrium reactions had to be assumed to occur on the surface in the first place.…”