Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study

Kondratyev, A.V.; Талалаев, Р.А.; Lundin, W. V.; Sakharov, A. V.; Tsatsul’nikov, A.V.; Заварин, Е. Е.; Фомин, А. В.; Sizov, D. S.

doi:10.1016/j.jcrysgro.2004.09.016

Cited by 43 publications

(28 citation statements)

References 4 publications

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“…The NH 3 molar flux was fixed at 0.178 mol/min and the growth temperature was maintained at 1050°C. During the deposition of AlGaN layers, reactor pressure was maintained at 70 mbar in order to reduce parasitic reactions [15].…”

Section: Methodsmentioning

confidence: 99%

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Ding

Guo

Zhang

et al. 2010

Sci. China Phys. Mech. Astron.

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Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 are grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The effects of Al content on crystal quality, surface morphology, optical and electrical characteristics of the AlGaN/GaN heterostructures have been analyzed. Although high Al-content (36%) heterostructure exhibits a distinguished photoluminescence peak related to recombination between the two-dimensional electron gas and photoexcited holes (2DEG-h), its crystal quality and rough surface morphology are poor. 2DEG mobility increases with the Al content up to 26% and then it apparently decreases for high Al-content (36%) AlGaN/GaN heterostructure. The increase of sheet carrier density with the increase of Al content has been observed. A high mobility at room temperature of 2105 cm 2 /V s with a sheet carrier density of n s = 1.10 × 10 13 cm −2 , for a 26% Al-content AlGaN/GaN heterostructure has been obtained, which is approaching state-of-the-art for HEMT grown on SiC. Sheet resistance as low as 274 Ω/□ has also been achieved. AlGaN, Hall-effect, luminescence

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Section: Methodsmentioning

confidence: 99%

Characterization of different-Al-content AlGaN/GaN heterostructures on sapphire

Ding

Guo

Zhang

et al. 2010

Sci. China Phys. Mech. Astron.

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show abstract

“…It is not easy to make high quality AlGaN alloy materials because the composition of AlGaN alloy is relatively difficult to control as there are a lot of differences between the growth mechanisms of AlGaN and GaN grown by metalorganic chemical vapor deposition (MOCVD) [2]. In fact, it is also difficult to grow AlGaN material with high Al content since the parasitic reaction of trimethylaluminum (TMAl) and ammonia (NH 3 ) occurred in the vapor phase is much more serious than that of trimethylgallium (TMGa) and NH 3 [3][4][5][6][7][8], and has an important influence on the Al content of AlGaN materials. Therefore, to obtain AlGaN material with high Al content, for example, used for producing solar-blind ultraviolet photodetectors, it is necessary to investigate the mechanism of parasitic reaction and find the way to effectively control the Al incorporation in the growth process of AlGaN and AlN.…”

Section: Introductionmentioning

confidence: 99%

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Zhao

Zhu

Jiang

et al. 2006

Journal of Crystal Growth

103

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“…The presence of particles has been detected experimentally, using laser light scattering, in a vertical inverted flow reactor [1]. The reduction of particle formation intensity and enhancement of the Al incorporation can be achieved via lowering of the reactor pressure [2][3], decrease of the gas residence time (higher inflow velocity) [1,3], reduction of the TMAl flow rate [3], and using lower V/III ratios [4][5].…”

Section: Introductionmentioning

confidence: 99%