Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Zhao, Degang; Zhu, Jianjun; Jiang, Desheng; Yang, Hui; Liang, Junwu; Li, X.Y.; Gong, Haimei

doi:10.1016/j.jcrysgro.2005.11.083

Cited by 103 publications

(83 citation statements)

References 12 publications

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“…It is shown that the AlGaN growth rate declines as reactor pressure increases. This result is reasonable because a higher reactor pressure may enhance parasitic reaction and further reduce the growth rate of AlGaN [7,11]. It has been reported that parasitic reaction of TMAl has a great influence on Al incorporation into the film [7].…”

Section: Resultsmentioning

confidence: 73%

“…When the reactor pressure is raised to 100 Torr, the parasitic reaction is still not so important, and the AlN growth rate increases slowly with increasing TMAl flux while the GaN growth rate might drop also slowly, and this can explain why the total AlGaN growth rate stays approximately unchanged with increasing TMAl flux. However, when the reactor pressure is raised to 200 Torr, the parasitic reaction of AlN become severe, but the AlN growth rate may still slightly rise a little with increasing TMAl flux as reported in [11]. It means the AlGaN growth rate may be reduced due to the parasitic effect of TMGa at the reactor pressure of as high as 200 Torr.…”

Section: Resultsmentioning

confidence: 80%

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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Deng¹,

Zhao²,

Le³

et al. 2011

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 80%

Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Deng¹,

Zhao²,

Le³

et al. 2011

Journal of Alloys and Compounds

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“…The further research results confirm that low reactor pressure can weaken parasitic reactions and lead to a higher Al content in AlGaN film (Deng et al, 2011). On the other hand, the enhancement of the surface mobility of Al is especially important for high quality AlGaN layers (Zhao et al, 2006b(Zhao et al, , 2008a. The migration-enhanced MOCVD is intended to carry on for improving the surface dynamic behavior of Al atoms in the growth (Zhang et al, 2002).…”

Section: Parasitic Reaction Between Tmal and Nh 3 In Mocvdmentioning

confidence: 68%

“…However, the parasitic reaction of TMAl and NH 3 occurring in the vapor phase is much more serious than that of TMGa and NH 3 (Mihopoulos et al, 1998), and it has an important influence on the growth of AlGaN materials. We will discuss parasitic reaction of TMAl and NH 3 in MOCVD and study how to reduce its effect in this section (Zhao et al, 2006b). Fig.…”

Section: Parasitic Reaction Between Tmal and Nh 3 In Mocvdmentioning

confidence: 99%

GaN Based Ultraviolet Photodetectors

Zhao¹,

Jiang²

2011

Photodiodes - World Activities in 2011

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“…This is because the consumption of TMA due to the adduct formation is decreased with decreasing growth pressure. Thus, the novel growth behaviour is explained by the adducts formation between TMA and NH 3 [26].…”

Section: Status Of Inaln Solar Cell Researchmentioning

confidence: 93%

Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells

Yamamoto

Islam

Kang

et al. 2010

Phys. Status Solidi (c)

122

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In this paper, we review and discuss the recent advances in InN‐based solar cells. Before the discussion on InN‐based solar cells, two major losses in a solar cell, transparency loss and excess excitation loss, are explained and the effectiveness of a multi‐junction tandem cell in reducing the both losses simultaneously is described. Then, the status and issues for multi‐junction tandem solar cells using the conventional III‐V materials (InGaP/InGaAs systems) are reviewed briefly in order to understand the advantages of InN‐based material as a multi‐junction solar cell material. It is shown that main problem in the conventional III‐V multi‐junction solar cell is the current mismatching between sub‐cells, which reduces significantly the conversion efficiency of the tandem cells. The main advantage of InGaN and InAlN as a multi‐junction solar cell is that a wanted band‐gap between 0.7 and 2.5 eV is realized by changing only their composition.This means that current matching between sub‐cells will be easily achieved using InGaN and InAlN systems. After the status of InGaN solar cell research is summarized, the results on the MOVPE growth of InGaN with an In content up to 0.4, Mg doping using Cp2Mg, and the formation of an n+‐p homo‐junction are described. The insertion of step‐graded InxGa1‐xN interlayer between the GaN and InGaN epilayer is also shown to be effective to improve the epilayer quality. The study on InAlN solar cell is on the stage of the growth of In‐rich InAlN. Single‐crystalline InAlN films with an Al content from 0 (Eg = 0.7 eV) to 0.43 (2 eV) have been successfully grown by employing atmospheric‐pressure MOVPE. The study on Mg‐doping for InAlN will be the next step. Finally, we will summarize and discuss the challenges in InGaN and InAlN solar cells. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Cited by 103 publications

References 12 publications

Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

GaN Based Ultraviolet Photodetectors

Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells

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