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Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronic devices. However, the direct growth of their crystals is in its infancy. Here we report a chemical vapor deposition approach to controllably grow layered tetragonal and non-layered hexagonal FeTe nanoplates with their thicknesses down to 3.6 and 2.8 nm, respectively. Moreover, transport measurements reveal these obtained FeTe nanoflakes show a thickness-dependent magnetic transition. Antiferromagnetic tetragonal FeTe with the Néel temperature ( T N ) gradually decreases from 70 to 45 K as the thickness declines from 32 to 5 nm. And ferromagnetic hexagonal FeTe is accompanied by a drop of the Curie temperature ( T C ) from 220 K (30 nm) to 170 K (4 nm). Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from its concomitant lattice distortion and Stoner instability. This study highlights its potential applications in future spintronic devices.

The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP 2 S 6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann’s limit for over seven decades of drain current, with a minimum SS of 28 mV dec −1 . Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec −1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.

The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals. Our device exhibits 17 mV dec−1 operation, a memory window larger than 3.8 V, and program/erase ratio greater than 107. Thanks to the trap-free interfaces and the minimized depolarization effects via van der Waals engineering, more than 104 cycles endurance, a 10-year memory retention and sub-5 μs program/erase speed are achieved. A single pulse as short as 100 ns is enough for polarization reversal, and a 4-bit/cell operation of a van der Waals ferroelectric transistor is demonstrated under a 100 ns pulse train. These device characteristics suggest that van der Waals engineering is a promising direction to improve ferroelectronic memory performance and reliability for future applications.

Porous materials have been identified as efficient sorbent media to remove volatile organic compounds. To evaluate their potential as adsorbents, the adsorptive removal of formaldehyde (FA) in aqueous environments was investigated using four materials, two water-stable metal− organic frameworks (MOFs) of UiO-66 (U6) and U6-NH 2 (U6N) and two covalent organic polymers (COPs) with amine-functionality, CBAP-1-EDA (CE) and CBAP-1-DETA (CD). U6N exhibited the highest removal capacity of 93% (0.56 mg g −1 ) of the tested materials [e.g., CE (81.1%, 0.53 mg g −1 ) > CD (67.2%, 0.43 mg g −1 ) > U6 (66.9%, 0.42 mg g −1 )], which was 2 times higher than that of the reference sorbent, activated carbon (AC: 50%, 0.30 mg g −1 ). The results of Fourier transform infrared and powder Xray diffraction analyses confirmed the interactions between FA molecules and the amine components of the materials (U6N, CD, and CE). According to density functional theory calculations, the formation of hydrogen bonds between FA molecules and amine components was apparent and was further verified by FA/amine distance (CD: 2.83, CE: 2.88, and U6N: 2.66 Å) along with enthalpy values (CD: −32.4, CE: −45.5, and U6N: −272 kJ mol −1 ). In case of U6, the major interactions occurred in the metal−clusters (−19.3 kJ mol −1 ) via electrostatic interactions (distance: 5.49 Å). Furthermore, the sorption by amine-functionalized materials such as U6N is suggested to be dominated by hydrogen bonding which ultimately led to the formation of imine. If the performance of the tested materials is evaluated in terms of partition coefficient, U6N (1153 mg g −1 mM −1 ) is found as the outperformer in all tested subjects. Regeneration of spent MOFs/COPs was also plausible in the presence of ethanol to maintain their structural integrity even after 10 adsorption−desorption cycles. Overall, the selected MOFs/COPs were seen to have very high removal capacity for hazardous FA molecules in aqueous phase.