Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Deng, Ya; Zhao, Dezheng; Le, L. C.; Jiang, Ding‐Sheng; Wu, Liangliang; Zhu, Jin; Wang, H.; Liu, Z.S.; Zhang, S.M.; Yang, Hui; Liang, Junwu

doi:10.1016/j.jallcom.2010.09.057

Cited by 6 publications

(4 citation statements)

References 12 publications

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“…Taking the above result into account, it is concluded that the parasitic reaction can be reduced by decreasing the growth temperature, reactor pressure and the flux of NH 3 . The further research results confirm that low reactor pressure can weaken parasitic reactions and lead to a higher Al content in AlGaN film (Deng et al, 2011). On the other hand, the enhancement of the surface mobility of Al is especially important for high quality AlGaN layers (Zhao et al, 2006b(Zhao et al, , 2008a.…”

Section: Parasitic Reaction Between Tmal and Nh 3 In Mocvdmentioning

confidence: 55%

GaN Based Ultraviolet Photodetectors

Zhao¹,

Jiang²

2011

Photodiodes - World Activities in 2011

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Section: Parasitic Reaction Between Tmal and Nh 3 In Mocvdmentioning

confidence: 55%

GaN Based Ultraviolet Photodetectors

Zhao¹,

Jiang²

2011

Photodiodes - World Activities in 2011

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“…The Al composition is 30, 31.5 and 33% for S-760, S-780 and S-800, respectively. It was reported that the growth rate significantly affects the Al incorporation efficiency in AlGaN growth [37,38]. Thus, the increased Al incorporation from S-760 to S-800 samples could be related to different growth rates of AlGaN with varied AlN buffer growth quality.…”

Section: Optical Propertiesmentioning

confidence: 99%

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

et al. 2021

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We have investigated the impact of AlN buffer layer growth parameters for developing highly single crystalline AlGaN films. The low mobility of Al adatoms and high temperature for compound formation are amongst the major causes that affects the growth quality of AlGaN films. Thus, proper optimization need to be carried out for achieving high quality AlGaN due to an augmented tendency of defect generation compared to GaN films. Thus, growth conditions need to be amended to maximize the incorporation ability of adatoms and minimize defect density. So, this study elaborates the growth optimization of AlGaN/AlN/Si (111) heterostructure with varied AlN buffer growth temperature (760 to 800 °C). It was observed that the remnant Al in low temperature growth of AlN buffer layer resist the growth quality of AlGaN epitaxial films. A highly single crystalline AlGaN film with comparatively lowest rocking curve FWHM value (~ 0.61°) and smooth surface morphology with least surface defect states was witnessed when AlN buffer was grown at 780 °C. From the Vegard’s law, the photoluminescence analysis unveils Aluminium composition of 31.5% with significantly reduced defect band/NBE band ratio to 0.3. The study demonstrates good crystalline quality AlGaN film growth with Aluminium content variation between ~ 30–39% in AlGaN/AlN heterostructure on Si(111) substrate leading to a bandgap range which is suitable for next-generation solar-blind photodetection applications.

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“…There are many processes to prepare the Al x Ga 1-x N compounds including metal-organic chemical deposition (MOCVD), [5][6][7][8][9][10][11][12][13] pulsed laser deposition (PLD), 14 molecular beam epitaxy (MBE), [15][16][17] and halide vapor phase epitaxy (HVPE). [18][19][20][21][22][23] Among these processes, MOCVD has been regarded as a chief apparatus for the commercial fabrication of LEDs.…”

Section: Introductionmentioning

confidence: 99%

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

et al. 2015

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In this work, the Al x Ga 1-x N-on-sapphire template was successfully prepared by halide vapor phase epitaxy (HVPE) at 1100 o C. The flow ratio (R) of the HCl flow rate through Al metal to the total HCl flow rates through Al and Ga metals was adjusted to control the Al content. The Al x Ga 1-x N films without phase separation can be obtained as the R value exceeds 0.67. The low R value strongly enhances the formation probability of GaN instead of Al x Ga 1-x N. This indicates that a sufficient concentration of the Al precursor is certainly vital for the formation of Al x Ga 1-x N compounds. The Al x Ga 1-x N prepared at the R value of 0.80 can achieve best crystallinity and the lowest surface roughness. Furthermore, the optical transmittance of the Al x Ga 1-x N under R=0.80 is above 70% between the wavelength of 225 nm and 400 nm. As a result, the Al x Ga 1-x N under R=0.80 can be regarded as a suitable growth template for the ultraviolet light-emitting diodes. The internal quantum efficiency of the 370 nm-quantum wells on the Al x Ga 1-x N/sapphire prepared under R=0.80 shows 127% improvement as compared with that on the undoped-GaN/sapphire.

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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Cited by 6 publications

References 12 publications

GaN Based Ultraviolet Photodetectors

GaN Based Ultraviolet Photodetectors

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition

Cited by 6 publications

References 12 publications

GaN Based Ultraviolet Photodetectors

GaN Based Ultraviolet Photodetectors

Investigating the growth of AlGaN/AlN heterostructure by modulating the substrate temperature of AlN buffer layer

HVPE growth of AlXGa1-XN templates for UV-LED applications

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Product

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HVPE growth of Al_XGa_1-XN templates for UV-LED applications