GaN Based Ultraviolet Photodetectors

Zhao, Dongmei; Jiang, Desheng

doi:10.5772/19172

Cited by 1 publication

(2 citation statements)

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“…Additional systematic and comprehensive reviews of GaN material and its application on UV detector have also been published. [1][2][3][4] The purpose of the present work is to extend the state-of-the-art in UV photodetector by: a) using a MBE technique to synthesize high quality of GaN film, and b) developing plasma technique to dope and functionalize GaN in order to achieve a high-performance deep UV photodetectors. Nanoplasmonic enhancement based on Ag nanoparticles on the GaN surface is employed in the present work in order to obtain an enhanced sensitivity.…”

Section: Aip Advances 6 085117 (2016)mentioning

confidence: 99%

“…Higher electron mobility and electron saturation velocity allow for higher frequency of operation, and fast responsivity. 3,4 To date, the synthesis of different types of GaN materials have been performed by using various technical routes, including pulsed laser deposition techniques, 5 electrochemical techniques, 6 hot filament chemical vapor deposition (HFCVD), 7 plasma enhanced CVD, 8 sputtering method, 9 spin coating method, 10 and molecular beam epitaxy (MBE), [11][12][13][14] among others.…”

Section: Introductionmentioning

confidence: 99%

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Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

et al. 2016

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High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.

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Section: Aip Advances 6 085117 (2016)mentioning

confidence: 99%