Influence of the reactor inlet configuration on the AlGaN growth efficiency

Growth conditions and surface morphology of AlN MOVPE

“…The AlN MOVPE model was previously verified on the data obtained in various reactors [8,9]. The computations were performed using the CVDSim software package [20].…”

“…Although the parasitic reactions between trimethylaluminum (TMAl) and ammonia promoting formation of AlN nanoparticles in the gas-phase are well known and can be described by modeling [8,9], the mechanisms by which they affect the surface morphology are still unclear. It has been found that the surface is getting rougher at enhanced parasitic reactions in the gas-phase, i.e.…”

Mechanisms of AlInN growth by MOVPE: modeling and experimental study

“…Additional information on the structural characterization can be found in [7]. We consider that in case of the AlInN growth the gasphase reaction mechanism includes a multi-step complex pathway for Al-containing species [10] and unimolecular decomposition of the indium precursor, TMIn, giving rise to monomethylindium (MMIn) and atomic indium. The formation of high-order Al-containing oligomers and both AlN and indium particles is assumed to be the source of material losses in the reactor volume.…”

Review—Review of Research on AlGaN MOCVD Growth

“…The effect of the reactor structure would be analyzed below. Moreover, the data could be affected by venting location of source gas, 64 the substrate type, 65 monitoring position 50 and in situ measurement methods, 42,66 hence there might be deviations in absolute data values, but it was certain from the trend analysis that the low pressure and high temperature were favorable for obtaining an AlGaN layer with high Al component. It was mentioned above that there were two ways to increase TMAl/III: maintained TMGa flow rate constant and increased TMAl flow rate, as well as kept TMAl flow rate constant and decreased TMGa flow rate).…”

“…It was mentioned above that there were two ways to increase TMAl/III: maintained TMGa flow rate constant and increased TMAl flow rate, as well as kept TMAl flow rate constant and decreased TMGa flow rate). When using the first way to increase TMAl/III, Lobanova et al, 60 Yakovlev et al 64 and Stellmach et al 42 found that as TMAl/III increased, the increasingly remarkable nonlinear relationship of Al component between TMAl/III indicated that the effect of increasing the flow rate of TMAl was not noticeable to improve the Al component when the flow rate of TMAl was large. Choi et al also found that 41 : Al component had nearly linear relationship with TMAl/III when the flow rate of TMAl was low, and tended to be saturate when the Al component exceeded 0.2.…”