A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride

Mazumder, Sandip; Sengupta, Debasis

doi:10.1016/j.jcrysgro.2003.11.009

Cited by 6 publications

(2 citation statements)

References 25 publications

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“…MOVPE simulation of GaN, InGaN, AlN, and AlGaN will be discussed in the following chapters using computational fluid dynamics (CFD) hereafter. The used code is CFD-ACE+ (ESI, France) [13] with the nitride-MOVPE database (Wavefront, Japan) [12]. The nitride-MOVPE database includes the reaction parameters for each modified Arrhenius equation, the molecular parameters such as Lennard Jones parameters, Sutherland's law coefficients, specific heat coefficients, and the high-temperature material parameters such as the optical absorption coefficient spectra and the specific heats.…”

Section: Simulation and Experimentsmentioning

confidence: 99%

Simulation of Nitride Semiconductor MOVPE

Ohkawa

2020

Digital Encyclopedia of Applied Physics

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This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia. The precursors decompose or react with others in the gas phase. The obtained reactive molecules form semiconductor layers on substrates. Those growth reaction pathways and the polymer formation will be discussed numerically for GaN, InN, InGaN, AlN, and AlGaN in this article. For those materials, the numerical analyses of growth rate and alloy composition exhibited the qualitative and quantitative agreements with experiments. The reader can see the growth mechanism, and experts will understand the current MOVPE conditions of nitride semiconductors.

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Section: Simulation and Experimentsmentioning

confidence: 99%

Simulation of Nitride Semiconductor MOVPE

Ohkawa

2020

Digital Encyclopedia of Applied Physics

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“…In parallel efforts to the advancement of epitaxial growth techniques, theoretical treatments intended to describe epitaxy in ways based on thermodynamics and kinetics have been progressing rapidly, from a simple classical phenomenological treatment to an advanced numerical treatment, as the performance of available computing systems rises steadily [16][17][18]. Theoretical treatments of epitaxy cover a wide range of relevant topics that include surface morphology, surface free energy, chemical potential, equilibrium crystal shape, surface wetting, nucleation, and dislocations, etc.…”

Section: Epitaxy In Nanometer-scalementioning

confidence: 99%

Randomly oriented indium phosphide nanowires for optoelectronics

Kobayashi

Logeeswaran

et al. 2007

SPIE Proceedings

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The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. Design, fabrication and characteristics of a photoconductor that utilizes an ensemble of randomly-oriented indium phosphide nanowires are described.

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MOCVD of Nitrides

Amano

2015

Handbook of Crystal Growth

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A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride

Cited by 6 publications

References 25 publications

Simulation of Nitride Semiconductor MOVPE

Simulation of Nitride Semiconductor MOVPE

Randomly oriented indium phosphide nanowires for optoelectronics

MOCVD of Nitrides

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