Simulation of Nitride Semiconductor MOVPE

Abstract

This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia. The precursors decompose or react with others in the gas phase. The obtained reactive molecules form semiconductor layers on substrates. Those growth reaction pathways and the polymer formation will be discussed numerically for GaN, InN, InGaN, AlN, and AlGaN in this article. For those materials, the numerical analyses of growth rate and alloy composition exhibited the qualitative and quantitative agreements with experiments. The reader can see the growth mechanism, and experts will understand the current MOVPE conditions of nitride semiconductors.

Recent progress in red light-emitting diodes by III-nitride materials

“…High-pressure growth provides the material with thermal stability under thermodynamic equilibrium states. Also, the growth of III-nitrides materials has been numerically investigated by computational fluid dynamics (CFD) simulation [38,50]. These CFD simulations are based on a huge number of chemical reactions, which agrees well with the experiment results both qualitatively and quantitatively.…”

“…We previously reported the modification of the inside flow channel's height from 7.5 mm to 5.0 mm by following the InGaN MOVPE CFD simulation [38,50,56]. This is the so-called "micro-flow channel technique."…”

“…The results require comparison with experiments to validate computational approaches. Theoretical works have been carried out to investigate the growth of In(Ga)N [30,38,[49][50][51][52]. Such analysis has contributed to the understanding of In(Ga)N growth in tandem with experimental results.…”

“…This technique helped develop yellow to red LEDs. Figure 1 shows the modeling of In atoms and NH 2 molecules in both flow channels by the simulation [38,50]. The numerical simulation results found that the concentration of the In atoms and NH 2 molecules in the vicinity of the growth surfaces were improved by 27% and 20% using the 5 mm height flow channel versus a conventional flow channel, respectively.…”