Methane-hydrogen III-V metal-organic reactive ion etching

Semu, Allen; Silverberg, P.

doi:10.1088/0268-1242/6/4/010

Cited by 17 publications

(8 citation statements)

References 6 publications

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“…H 2 and CH 4 are easier to handle, less toxic, less corrosive, and more environment friendly than halocarbon gasses ͑especially after abate-ment͒. They have been used in RIE for a range of semiconducting compounds such as groups III-V, [41][42][43] II-VI, 44,45 and IV-VI. 46…”

Section: B Ch 4 /H 2 / Ar Based Etching Of Teomentioning

confidence: 99%

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Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

Madden

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors report in detail on the reactive plasma etching properties of tellurium and demonstrate a high quality etching process using hydrogen, methane, and argon. Very low loss planar ridge waveguides are demonstrated. Optical losses in tellurium dioxide waveguides below 0.1 dB/cm in most of the near infrared region of the electromagnetic spectrum and at 1550 nm have been achieved-the lowest ever reported by more than an order of magnitude and clearly suitable for planar integrated devices. The etch process is also shown to be suitable for chalcogenide glasses which may be of importance in applications such as phase change memory devices and nonlinear integrated optics.

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Section: B Ch 4 /H 2 / Ar Based Etching Of Teomentioning

confidence: 99%

“…The combinations of tellurium dioxide with highly reactive hydrogen and methane radicals form all volatile compounds ͒ 2 ,39 and H 2 O. Some of the possible chemical reactions are as follows:42,46 TeO 2 + 3H 2 → TeH 2 + 2H 2 O, ͑1͒…”

mentioning

confidence: 99%

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

Madden

2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The fabrication of integrated optoelectronic devices necessitates pattern transfer techniques with a high degree of precision and a variable anisotropy, which is not achievable with wet etching process. Various dry etching techniques, such as plasma etching [1][2], reactive ion etching (RIE) [3][4][5], ion beam etching (IBE) [6][7], reactive ion beam etching (RIBE) [8][9], chemically assisted ion beam etching (CAIBE) [10][11] and inductively coupled plasma (ICP or RIE/ICP) etching [12] have been successfully used to fabricate InP-based devices to date. Of these techniques, RIE and ICP, which are well known and widely used dry-etching methods, provide higher anisotropy and better surface morphology when compared with other techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Of these techniques, RIE and ICP, which are well known and widely used dry-etching methods, provide higher anisotropy and better surface morphology when compared with other techniques. RIE of InP has been reported by using Cl 2 -based (halogen) chemistries [13][14] and methane (CH 4 )/hydrogen(H 2 ) mixtures [15][16].…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl2F2/O2 and H2/CH4

Çakmak¹,

Bı̇ber²,

Karacalı³

et al. 2013

OPJ

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We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of CCl 2 F 2 /O 2 and H 2 /CH 4 were used to form ridge-waveguide on the lasers with InP-based material structures. As known, chlorine-and hydrocarbon based gases are used to fabricate ridge-waveguide structures. Here, we show the difference between the structures obtained by using the both gas mixtures in which surface and sidewall structures as well as performance of the lasers were analysed using scanning electron microscopy. It is demonstrated that gas mixtures of CCl 2 F 2 /O 2 highly deteriorated the etched structures although different flow rates, rf powers and base pressures were tried. We also show that the structures etched with H 2 /CH 4 gas mixtures produced much better results that led to the successful fabrication of two-section devices with ridge-waveguide. The lasers fabricated using H 2 /CH 4 were characterized using output power-current (P-I) and spectral results.

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“…Some literature is available on ECR or ICP RIE applied to GaSb and its related materials using gas mixtures of CH 4 /H 2 /Ar. [11][12][13][14] The reported etch properties, etch rate and surface morphology, differ due to the different chamber geometries and gas mixtures used. Hence, more studies are necessary to establish the systematic variations in etching results as a function of plasma and rf power, gas mixture, and chamber pressure.…”

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confidence: 99%

RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma

Mohammedy¹,

Zhang

Thompson

et al. 2007

J. Electrochem. Soc.

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Reactive ion etching ͑RIE͒ of GaSb samples was investigated under electron cyclotron resonance ͑ECR͒ conditions using CH 4 /H 2 /Ar gas mixtures. Different etching parameters ͓e.g., microwave and radio-frequency ͑rf͒ power levels, gas ratios, chamber pressure, etc.͔ were systematically varied to observe their effects on the etch characteristics. For microwave powers up to ϳ200 W the etch rate was found to increase with increasing microwave power. Above 200 W the etch rate appears to saturate for lower rf power levels ͑100 W͒ but at higher rf power ͑275 W͒ the etch rate continues to increase linearly with microwave power over the range investigated. Gas ratios of CH 4 /H 2 /Ar of 4:16:7.6 and 8:12:25 were used with the latter ratio yielding higher etch rates. The etch rate decreased with increasing chamber pressure over the range of 2-20 mTorr. Etching of the SiO 2 mask was observed and the corresponding GaSb etch rates were adjusted to account for this mask erosion. Excellent feature geometries were observed with vertical sidewalls and a smooth surface morphology.

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Methane-hydrogen III-V metal-organic reactive ion etching

Cited by 17 publications

References 6 publications

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> and H<sub>2</sub>/CH<sub>4</sub>

RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma

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Methane-hydrogen III-V metal-organic reactive ion etching

Cited by 17 publications

References 6 publications

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

Reactive ion etching of tellurite and chalcogenide waveguides using hydrogen, methane, and argon

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl&lt;sub&gt;2&lt;/sub&gt;F&lt;sub&gt;2&lt;/sub&gt;/O&lt;sub&gt;2&lt;/sub&gt; and H&lt;sub&gt;2&lt;/sub&gt;/CH&lt;sub&gt;4&lt;/sub&gt;

RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma

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A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> and H<sub>2</sub>/CH<sub>4</sub>