Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy J. Vac. Sci. Technol. B 31, 041203 (2013); 10.1116/1.4812793 Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition J. Appl. Phys. 108, 093511 (2010); 10.1063/1.3487955Strain relaxation and surface roughness of In x Al 1 − x As graded buffer layers grown on InP for 6.05 Å applications J.Growth of room-temperature "arsenic free" infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers Metamorphic growth of In 0.15 Ga 0.85 Sb on a GaSb substrate is reported using In x Ga 1−x Sb buffer layers compositionally graded in steps of x = 0.03. All layers were grown using gas source molecular beam epitaxy with a fixed Sb flux providing an excess group-V overpressure. The growth temperature was varied from 450 to 540°C. X-ray diffraction analysis was used to determine the effect of growth temperature on relaxation and residual strain. As the growth temperature is increased, cross-sectional transmission electron microscopy ͑TEM͒ shows that the number of dislocations threading through the metamorphic layer are reduced. Plan-view TEM yields misfit dislocation density around 10 8 cm −2 and from atomic force microscopy, the surface roughness is ϳ1 nm. Both surface roughness and dislocation density improves with higher growth temperature. Finally, p-i-n homojunction diodes of various sizes on metamorphic layers were demonstrated.