RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma

Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy J. Vac. Sci. Technol. B 31, 041203 (2013); 10.1116/1.4812793 Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition J. Appl. Phys. 108, 093511 (2010); 10.1063/1.3487955Strain relaxation and surface roughness of In x Al 1 − x As graded buffer layers grown on InP for 6.05 Å applications J.Growth of room-temperature "arsenic free" infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers Metamorphic growth of In 0.15 Ga 0.85 Sb on a GaSb substrate is reported using In x Ga 1−x Sb buffer layers compositionally graded in steps of x = 0.03. All layers were grown using gas source molecular beam epitaxy with a fixed Sb flux providing an excess group-V overpressure. The growth temperature was varied from 450 to 540°C. X-ray diffraction analysis was used to determine the effect of growth temperature on relaxation and residual strain. As the growth temperature is increased, cross-sectional transmission electron microscopy ͑TEM͒ shows that the number of dislocations threading through the metamorphic layer are reduced. Plan-view TEM yields misfit dislocation density around 10 8 cm −2 and from atomic force microscopy, the surface roughness is ϳ1 nm. Both surface roughness and dislocation density improves with higher growth temperature. Finally, p-i-n homojunction diodes of various sizes on metamorphic layers were demonstrated.

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“…16. Mesas of about 4 m height were etched by reactive ion etching in a methane/argon/hydrogen dry plasma environment.…”

Section: Device Fabricationmentioning

confidence: 99%

Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes

Mohammedy

Hulko

Robinson

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Growth and fabrication issues of GaSb-based detectors

Mohammedy

Deen

2009

J Mater Sci: Mater Electron

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GaSb on GaAs interfacial misfit solar cells

Nelson

Juang

Slocum

et al. 2016

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial mist arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial mist arrays could achieve higher eciency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g eciency of 5.5% and a 44-sun AM1.5d eciency of 8.9%. The GaSb-on-GaAs cell was 1.0% ecient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute eciency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the eectiveness of the GaSb junction was a function of concentration.The state-of-the-art single-substrate multi-junction solar cell is the inverted metamorphic (IMM) cell, where lattice mismatched subcells are grown monolithically via compositionally graded buer layers. 13 Growth of a typical triple-junction (3-J) IMM starts with a GaAs (lattice

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RIE of GaSb with an ECR Source Using Methane/Hydrogen Chemistry in an Argon Plasma

Cited by 5 publications

References 23 publications

Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes

Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes

Growth and fabrication issues of GaSb-based detectors

GaSb on GaAs interfacial misfit solar cells

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