A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> and H<sub>2</sub>/CH<sub>4</sub>

Abstract

We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of CCl 2 F 2 /O 2 and H 2 /CH 4 were used to form ridge-waveguide on the lasers with InP-based material structures. As known, chlorine-and hydrocarbon based gases are used to fabricate ridge-waveguide structures. Here, we show the difference between the structures obtained by using the both gas mixtures in which surface and sidewall structures as well as performance of the lasers were analysed using scanning electron microscopy. It is demonstrated that gas mixtures of CCl 2 F 2 /O 2 highly deteriorated the etched structures although different flow rates, rf powers and base pressures were tried. We also show that the structures etched with H 2 /CH 4 gas mixtures produced much better results that led to the successful fabrication of two-section devices with ridge-waveguide. The lasers fabricated using H 2 /CH 4 were characterized using output power-current (P-I) and spectral results.

Numerical investigation of 1550 nm passively mode-locked diode lasers with different gain and absorber configurations

“…Lasers operating at 1550 nm wavelength are of great importance in fiber optical communication systems because fiber loss is the lowest at this wavelength. InP-based devices have started to dominate opto-electronics because lasers and related devices such as AlGaInAs/InP (1550 nm) heterostructures are suitable for lowloss fibre communications and integrated optics [3]. One of the techniques which is widely used to generate ultrashort optical pulses is mode-locking.…”

A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers

“…Lasers operating at 1550 nm wavelength is of great importance in fiber optical communication systems because fiber loss is the lowest at this wavelength. InP-based devices have started to dominate opto-electronics because lasers and related devices with InGaAsP/InP and AlGaInAs/InP heterostructures are suitable for low-loss fiber communications and integrated optics [4]. It should be noted that AlGaInAs/InP semiconductor lasers are widely used in optical fiber communication systems because AlGaInAs quaternary materials have a larger conduction band offset (∆E c /∆E g = 0.7) compared to InGaAsP (∆E c /∆E g = 0.4) [4].…”

“…InP-based devices have started to dominate opto-electronics because lasers and related devices with InGaAsP/InP and AlGaInAs/InP heterostructures are suitable for low-loss fiber communications and integrated optics [4]. It should be noted that AlGaInAs/InP semiconductor lasers are widely used in optical fiber communication systems because AlGaInAs quaternary materials have a larger conduction band offset (∆E c /∆E g = 0.7) compared to InGaAsP (∆E c /∆E g = 0.4) [4]. Therefore, thermal stability and electron confinement in Al-quaternary quantum wells (QWs) are better than that of Pquaternary systems.…”