We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of CCl 2 F 2 /O 2 and H 2 /CH 4 were used to form ridge-waveguide on the lasers with InP-based material structures. As known, chlorine-and hydrocarbon based gases are used to fabricate ridge-waveguide structures. Here, we show the difference between the structures obtained by using the both gas mixtures in which surface and sidewall structures as well as performance of the lasers were analysed using scanning electron microscopy. It is demonstrated that gas mixtures of CCl 2 F 2 /O 2 highly deteriorated the etched structures although different flow rates, rf powers and base pressures were tried. We also show that the structures etched with H 2 /CH 4 gas mixtures produced much better results that led to the successful fabrication of two-section devices with ridge-waveguide. The lasers fabricated using H 2 /CH 4 were characterized using output power-current (P-I) and spectral results.
In this study, zinc oxide (ZnO) thin films are deposited on fluorine doped tin oxide (FTO) substrates by using a successive ionic layer adsorption and reaction (SILAR) method. One of the samples is not annealed and others are annealed at 200, 400 and 600 °C, and all the samples are aged under ultraviolet (UV) light for 19 h.These samples are used to investigate the effect of annealing and aging on the properties of ZnO. Structural properties of the ZnO thin films are examined with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Photoluminescence, transmittance and absorption measurements are used to observe the optical properties of the films. In the literature, there is no study investigating the effect of aging on ZnO thin films deposited with the SILAR method, hence this study fills the gap in the literature.
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