The spectral dependence of the hole photoionization cross section σ0p of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section σ0n, accurate values of the photon energies and the cross sections at which σ0n=σ0p could be obtained. These data are of importance for rapid and accurate determination of concentration and charge states of EL2 in GaAs, e.g., in wafer mapping applications.

Electron cyclotron resonance reactive ion etching of fine features in Hg x Cd1−x Te using CH4/H2 plasmas J.

A CH,/H, gas mixture has been used for reactive ion etching of GaAs. Gap. GaSb, InP and GalnAsP in an effort to achieve slow, smooth, anisotropic mesa etching of micrometre to submicrometre structures without causing considerable surface damage or stoichiometric modifications to the etched compounds. Parametric effects have been studied to try to understand the etching mechanism.

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