Hole photoionization cross sections of EL2 in GaAs

Silverberg, P.; Omling, P.; Samuelson, Lars

doi:10.1063/1.99020

Cited by 163 publications

(52 citation statements)

References 10 publications

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“…The known quantities are n ϭ0.907 ϫ 10 Ϫ16 cm 2 for 1.1 m light, 8,9 v n ϭͱ8kT/ m n *ϭ4.16ϫ10 7 cm/s, and Cϭ2.6ϫ10 6 cm Ϫ3 , all valid at 300 K.…”

Section: ͑3͒mentioning

confidence: 99%

“…The concentration of electrons excited per unit time is I 0 n N EL2 0 , where n , the optical ͑photo-ionization͒ cross section for EL2, is well known. 8,9 The steady-state concentration of electrons is I 0 n N EL2 0 n , where n is the lifetime. Since the photoexcited electron is removed from the conduction band by being trapped at an EL2 ϩ center, we can write…”

mentioning

confidence: 99%

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Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Fang

1996

Journal of Applied Physics

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A simple experiment involving only the measurement of dark current Idark and 1.1 μm photocurrent IPC in semi-insulating (SI) GaAs allows an accurate determination of the electron capture cross section σn for the important defect EL2 in GaAs. For 45 SI GaAs samples, from 12 different boules, grown by three different techniques, we find that IPC/Idark=1.96±0.05 at 300 K. This relationship gives σn=1.4±0.4×10−16 cm2, which is compared to previously estimated values.

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“…The known quantities are n ϭ0.907 ϫ 10 Ϫ16 cm 2 for 1.1 m light, 8,9 v n ϭͱ8kT/ m n *ϭ4.16ϫ10 7 cm/s, and Cϭ2.6ϫ10 6 cm Ϫ3 , all valid at 300 K.…”

Section: ͑3͒mentioning

confidence: 99%

mentioning

confidence: 99%

Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Fang

1996

Journal of Applied Physics

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“…In our experiments we use an additional infrared (IR) laser to influence the field F. The excitation energy of the IR laser, hν IR = 1.240 eV, is considerably less than the lowest transition energy of the sample studied and, accordingly, can not simultaneously excite both electrons (e's) and holes (h's), but can generate solely either e's or h's by excitation of deep level (DL) defects positioned in the band gap of the CaAs barriers [22]. According to our model, these extra carriers, excited by the IR laser, will effectively screen the field F and will consequently slow down the carrier transport in the plane of the WL.…”

Section: Introductionmentioning

confidence: 99%

Effect of an Electric Field on the Carrier Collection Efficiency of InAs Quantum Dots

et al. 2005

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Individual and multi quantum dots of InAs are studied by means of microphotoluminescence in case when, in addition to the principal laser exciting photoluminescence, second infrared laser is used. It is demonstrated that the absorption of the infrared photons effectively creates free holes in the sample, which leads to both change in the charge state of a quantum dot and to the considerable reduction of their photoluminescence signal. The later effect is explained in terms of an effective screening of the internal electric field, facilitating the carrier transport along the plane of a wetting layer, by the surplus holes from the infrared laser. It is shown that the effect of quenching of quantum dot photoluminescence gradually disappears at increased sample temperature (T ) and / or dot density. This fact is due to the essentially increased value of quantum dot collection efficiency which could be achieved at elevated sample temperatures for the individual quantum dots or even at low T for the case of multi quantum dots. It is suggested that the observed phenomena can be widely used in practice to effectively manipulate the collection efficiency and the charge state of quantum dot-based optical devices.

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“…[10] II. EXPERIMENT The sample investigated in this work consisted of a nominally undoped 1×1×2 cm 3 GaAs block containing 1.45× 10 16 cm −3 EL2 centers, as determined by optical absorption spectroscopy [12], and a carbon concentration of the order of 1×10 16 cm −3 , estimated from FFT-IR absorption. [13] The spectral analysis revealed that essentially all EL2 were in the normal state at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Photoquenching indications of a thermally triggered transition between two different EL2 metastable states in GaAs

Fávero¹,

Cruz²

2006

Braz. J. Phys.

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In this work we report the observation of two different EL2 metastable states in GaAs and the effect of the optical/thermal history of the sample on the behavior of the photoquenching kinetics. In one thermal/optical preparation, the photoquenching curve presented two time constants that have already been interpreted as an indication of two different metastable states. With another preparation, the initial rise in transmittance displayed only one time constant, and we observed that a temperature increase to 83K triggered a second photoquenching process. We associated this new photoquenching with a transition from the fi rst to the second metastable state. The experimental data is explained in terms of a new proposal for the microscopic structure of the EL2 complex.

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Hole photoionization cross sections of EL2 in GaAs

Cited by 163 publications

References 10 publications

Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Effect of an Electric Field on the Carrier Collection Efficiency of InAs Quantum Dots

Photoquenching indications of a thermally triggered transition between two different EL2 metastable states in GaAs

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