Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Fang, Z-Q.

doi:10.1063/1.363233

Cited by 15 publications

(11 citation statements)

References 9 publications

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“…A reported zero field value of e = 4.1ϫ 10 −16 was used in our simulation as our SI GaAs was under the similar operating condition. 24,28,33 The reported electron capture cross section enhancement also varies from 1 to 300 times the zero field values under the 1.7-7 kV/cm biased field. 18 Figure 4 presents the modeling results of the output voltage evolution using the SRHM with and without considering the hole's effects ͑the SSRHM͒.…”

Section: Parameters Used In the Model Simulationsmentioning

confidence: 92%

“…Tables I, III, and IV list the parameters used for the simulations of this work. [24][25][26] The neutral EL2 concentration n DD0 is a key parameter in the minimum photoresistance simulations but can be calculated using the Fermi-Dirac occupation probability, f 0 . Under equilibrium conditions, the occupation factor ͑occupied fraction͒ becomes the Fermi-Dirac occupation probability, which for a single charge state defect center is 25…”

Section: The Algorithm For Minimum Photoresistances R Pcssmentioning

confidence: 99%

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Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse

Zheng

Ruan³

et al. 2009

Journal of Applied Physics

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The Shockley-Read-Hall model ͑SRHM͒ and its simplified model ͑SSRHM͒ were used to describe the characteristics of a photoconductive semiconductor switch ͑PCSS͒ made from a semi-insulating ͑SI͒ gallium arsenide ͑GaAs͒ chip, biased at low voltage, and illuminated by a 1.064 m laser pulse. These characteristics include the free carrier densities, dynamic photoresistance, and time evolution of output pulses of the PCSS. The deep donor EL2 centers in SI GaAs play a dominant role in both the SRHM and SSRHM as electrons at EL2 unionized centers are strongly excited by the subband-gap photons at the wavelength of 1.064 m. Theoretical modeling on the evolution of the experimental measured output pulses led to a two-step micromechanism of electron excitation process within the GaAs chip. The minimum photoresistances predicted by the SSRHM are in good agreement with experimental measurements, which confirms the dominant role of EL2 in the generation of electric pulses from a SI GaAs photoconductivity switch on which the 1064 nm laser pulse is illuminated.

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Section: Parameters Used In the Model Simulationsmentioning

confidence: 92%

Section: The Algorithm For Minimum Photoresistances R Pcssmentioning

confidence: 99%

Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse

Zheng

Ruan³

et al. 2009

Journal of Applied Physics

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“…1 ͑left͒, so a long O Sb ͑OBB-DX͒ + state is not known, therefore we can only use known values of other traps as an estimate. The EL2 center in GaAs has a capture cross-section of 1.4 ϫ 10 −16 cm −2 at 300 K. 27 We, therefore, estimate the range of 10 −16 -10 −15 cm −2 , and use the upper limit of 10 −15 cm −2 , which corresponds to the shortest lifetime. The rate of capturing a free electron from the conduction band is estimated to be ϳ1.6ϫ 10 −6 s −1 , which corresponds to a lifetime of ϳseven days.…”

Section: Survey Of Defects In Alsbmentioning

confidence: 99%

Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb

Shen

Dasgupta

Reed

et al. 2010

Journal of Applied Physics

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Recent observations of electrical stress-induced recoverable degradation in InAs/AlSb high-electron mobility transistors (HEMTs) have been attributed to metastable defects in the AlSb layer generated by the injected holes. Here we present a detailed theoretical analysis of the degradation mechanism. We show that recoverable degradation does not require the presence of hot carriers in the vicinity of the defects but the degradation is enhanced when the injected holes become more energetic. The metastable degradation arises without the presence of an energy barrier. A comprehensive survey of candidate defects suggest that substitutional and interstitial oxygen are responsible for the degradation. Therefore, reducing the oxygen contamination during device fabrication is likely to significantly improve the reliability of InAs/AlSb HEMTs.

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“…However, exactly the same discrepancy was obtained by Look and Fang. 34 Furthermore, Look and Fang calculated the capture cross section ratio σ nEL2 /σ pEL2 to be 70. From our results in this work, that ratio is 71.4, which is again in a very good agreement.…”

Section: Photocurrent Transient Simulationsmentioning

confidence: 99%

The impact of deep levels on the photocurrent transients in semi-insulating GaAs

Pavlović

Šantić

Desnica-Frankovic

et al. 2003

Journal of Elec Materi

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The photocurrent transients, I PC (t), were studied in semi-insulating (SI) GaAs during a low-temperature (low-T) illumination. Unusual transients were explained by the model, relating I PC (t) to the deep levels/traps and their occupancy. Such traps were actually detected and characterized by the independent measurements of the thermally stimulated currents (TSCs). The processes of the generation, recombination, and capture were described by a set of coupled differential equations and solved numerically. The I PC (t), calculated without any free parameter, well reproduced (through eight orders of magnitude) the experimental transients over a wide range of the photon energies and intensities. The best-fit parameters agreed well with those determined from the TSC measurements.

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Simple measurement of 300 K electron capture cross section for EL2 in GaAs

Cited by 15 publications

References 9 publications

Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse

Photoresistances of semi-insulating GaAs photoconductive switch illuminated by 1.064 μm laser pulse

Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb

The impact of deep levels on the photocurrent transients in semi-insulating GaAs

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