Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer

Kolník, J.; Ivančo, J.; Ožvold, M.

doi:10.1002/pssa.2211300129

Cited by 7 publications

(3 citation statements)

References 13 publications

(7 reference statements)

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“…7 The fabrication process was completed by evaporating 1000 A of Au in a high-vacuum system with the base pressure -5 X lo-6 Pa, and patterning circular diode-like structures with a diameter of 130 pim by wet etching. The term "reference sample" is used for the sample without silicon nitride deposited at the interface.…”

Section: Il Experimentsmentioning

confidence: 99%

Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

Kolník

Ivančo

Ožvold

et al. 1993

Journal of Applied Physics

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Articles you may be interested inElectrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance J. Vac. Sci. Technol. A 15, 3143 (1997); 10.1116/1.580859Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition Deposition of single phase, homogeneous silicon oxynitride by remote plasmaenhanced chemical vapor deposition, and electrical evaluation in metal-insulator-semiconductor devicesThe effect of the ultrathin interfacial layer of silicon nitride deposited by remote plasma-enhanced chemical vapor deposition technique on the Schottky barrier characteristics of Au/n-GaAs contacts is investigated. The changes of both capacitance-voltage and current-voltage characteristics, in dependence on the interfacial layer thicknesses are discussed and explained on the basis of the surface passivation. The influence of thermal annealing on the structure and electrical properties is also presented. In contrast to the very poor stability of the electrical characteristics of reference Au/GaAs contacts, structures with silicon nitride interfacial layers show much improved thermal stability with the minimum ideality factor for the silicon nitride interfacial layer being 9 A thick and annealed at 450 'C. The effect of silicon nitride interlaver as a diffusion barrier is confirmed by Auger electron spectroscopy analysis of both reference and silicon nitride containing structures.

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Section: Il Experimentsmentioning

confidence: 99%

Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

Kolník

Ivančo

Ožvold

et al. 1993

Journal of Applied Physics

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“…For instance, it helps to control the redistribution of the interface states or reduces the chemical interaction at the surface. [11][12][13] On the other hand, the SiN x layer is an electrically active and is crucial to cause the rectifying behavior in this transparent diode. This result is important because this distinctive rectifying behavior has not been reported previously.…”

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A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction

Choi

Kim

Choi

2015

Applied Physics Letters

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We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiNx). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiNx junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm2 on-current density measured at −7 V; lower than 7.3 × 10−9 A/cm2 off-current density; 2.53 ideality factor; and high rectifying ratio of 108–109. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiNx/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

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“…The spectrum of the RM-Si 3 N 4 has been described previously in Ref. 9. Here, it would be worth mentioning, the absorption peak corresponding to Si-N bonds has been located at 820 cm Ϫ1 .…”

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Influence of plasma on silicon surface during low-energy plasma deposition process: The comparative study on Si3N4/Si structures

Ivančo

Thurzo

Pinčík

1994

Applied Physics Letters

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Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer

Cited by 7 publications

References 13 publications

Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

Increased thermal stability of Au/GaAs metal-insulator-semiconductor Schottky diodes with silicon nitride interfacial layer deposited by remote plasma-enhanced chemical vapor deposition

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction

Influence of plasma on silicon surface during low-energy plasma deposition process: The comparative study on Si3N4/Si structures

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