Structural characterization of a fully etched amorphous W/Si
multilayer grating with a lateral periodicity of 800 nm is performed by x-ray
reflectivity in the coplanar and non-coplanar modes using a scintillation
detector and a two-dimensional gas-filled detector, respectively.
Three-dimensional reciprocal space constructions were used to explain the
scattering features recorded in both geometries. Coplanar coherent grating
truncation rods were fitted by a dynamical theory for rough gratings.
Comparison of the reflectivity from the reference planar multilayer completes
the study.
Results of charge deep-level transient spectroscopy ͑DLTS͒ and electron spin resonance ͑ESR͒ measurements on undoped hydrogenated amorphous silicon (a-Si:H͒ clearly demonstrate that a group of gap states with a mean energy of 0.82 eV as observed in charge DLTS experiments for a-Si:H based metal/oxide/ semiconductor structure is the same as the gϭ2.0055 ESR defect ͑the D z component͒. This correlation provides a distinct marker for charge DLTS technique. We obtained a very good fit to spectra obtained on undoped a-Si:H in the annealed state whilst there is some discrepancy between the experimental and simulated spectra for the light-soaked state. The first quantitative comparison of defect pool model with gap states directly observed by charge DLTS offers not only additional data for more accurate identification of all the intrinsic and light-induced defects. This also renders distinct counter-evidence to recently published conjectures about the creation of another charged defect during early stage of Staebler-Wronski effect. By contrast, our presented results clearly argue for opposite process, i.e., decay of positively charged defect states D h .
Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si (001) We present a photoemission study on reactivity of the Au-Si system. We studied gold films evaporated atop ultrathin silicon layers previously deposited on GaAs. Following analysis of both the Si 2p core level and the Au 5d valence band spectra related response, we show that the reaction mechanism between Au and Si is affected by structural imperfections of the silicon layer. This is in sharp opposition to some current models of the reactivity mechanism.
Structural characterization of a fully etched amorphous W/Si multilayer grating with lateral periodicity 800 nm is performed by x-ray reflectivity. Grating truncation rod profiles have been calculated using a matrix modal eigenvalue approach of the dynamical theory of reflectivity by gratings which generalizes the Fresnel transmission and reflection coefficients for lateral diffraction. The interface roughness in rough gratings has been taken into account by a coherent amplitude approach which damps the generalized Fresnel coefficients. Scanning electron microscopy pictures complete the study.
Small‐signal charge transient spectroscopy (QTS) is applied to GaAs MOS capacitors prepared by rf plasma oxidation of heavily doped GaAs wafers (ND ≈ 1018 cm−3). Both accumulation and depletion modes of operation are employed to search for oxide charging effects as well as for interface traps. The depletion mode QTS points to a U‐shaped continuous energy spectrum of interface states with two discrete levels at Ec − 0.38 eV and Ec − 0.75 eV, respectively, being superimposed on the spectrum. The Ec − 0.75 eV level is found to be sensitive to the electric field intensity at the GaAs‐oxide interface. The MOS diodes prepared by high‐temperature oxidation (Tox > > 250 °C) exhibit an additional QTS peak under both accumulation and depletion conditions, which peak seems to reflect a transient charging of the oxide.
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