The effect of an inversion layer on the interface parameters of the Schottky-barrier diode determined by analysis of its I-U characteristics is discussed. It is shown that the formation of the inversion layer at the semiconductor surface reduces the dependence of the barrier height on bias, similarly as the presence of the interface states that are in equilibrium with the metal Fermi level. Expressions for evaluating the density of interface states and the relative interfacial layer thickness are derived. On the basis of these expressions the influence of the inversion layer on the measured density of interface states in silicon and GaAs Schottky diodes is estimated.Es wird der EinfluB der Inversionsschicht auf die Grenzflachenparameter von Schottky-Barrierendioden diskutiert, die aus I-U-Charakteristiken ermittelt wurden. Die Bildung der Inversionsschicht auf der Halbleiteroberflache reduziert die Abhangigkeit der Barrierenhohe von der Spannung in ahnlicher Weise wie die Anwesenheit der Grenzflachenzustande, die im Gleichgewicht mit dem Fermi-Niveau des Metalls sind. Es werden Formeln hergeleitet fur die Bestimmung der Grenzflachenzustandsdichte und der relativen Dicke der Grenzflachenschicht. Mit Hilfe dieser Formeln wird der EinfluD der Inversionsschicht aufdie Grenzflachenzustandsdichte von Siund GaAs-Schottky-Dioden abgeschatzt.
The electrical characteristics of Schottky diodes with thin plasma deposited silicon nitride interfacial layers, using W and Ti on both, p‐ and n‐t ype substrates and Ni on n‐t ype substrates are investigated. For the first time Schottky MIS diodes with remote plasma deposited silicon nitride interfacial layer are reported. The Schottky barrier value change vs. nitride thicknesses is explained to be due to the reduction of the metal‐s emiconductor interaction and passivation of surface states.
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