The optical band gap of semiconducting iron disilicide thin films

Synthesis and characterization of β-phase iron silicide nano-particles by chemical reduction

“…Thus the direct band gap is determined to be E g = 0.875 eV in mid-infrared region from the intersection of the tangent from the energy axis. Therefore, the result is in good agreement with the (0.87 ± 0.04) eV direct bandgap of ␤-FeSi 2 as reported by Ozvold et al [52]. Fig.…”

“…Although most of the optical experimental observation conducted by Bost et al [48] and other authors [1,[49][50][51][52] showed that ␤-FeSi 2 is a direct band gap semiconductor with E g = 0.85-0.87 eV the papers related to band structure calculated by several authors [1,6,7,31,32] showed that it is both direct band gap semiconductor at Y and point as well as indirect band gap semiconductor along to Y along high symmetry directions. According to Filonov et al [1] and Eisebitt et al [34] the most important feature of the band structure is characterized by a direct band gap at point lies in between and Z k points which is 0.742 eV and 0.78 eV, respectively, whereas according to Christensen et al [32] and Eppenga et al [31] the calculated direct gap value at is about 0.80 eV and 0.92 eV, respectively.…”

Optical band gap of semiconductive type II Si clathrate purified by centrifugation

“…The reported E g values were, e.g. 0.68 eV for MnSi 1.7 [12], 1.15 eV for BaSi 2 [13], 0.87 eV for b-FeSi 2 [14], 0.41 eV for Ru 2 Si 3 [15] and 0.95 eV for Os 2 Si 3 [15]. Thus, the present material Na x Si 136 exhibited a relatively high E g compared to other Si-related materials other than SiC.…”

X-ray diffraction analysis of an osmium silicide epilayer grown on Si(100) by molecular beam epitaxy

“…The data was normalized and then smoothed by 25-point adjacent averaging. Absorption coefficients were extracted from the measured transmission spectra using the method described elsewhere [14]. Fig.…”