The Influence of Inversion Surface Layers on the Evaluation of the Interface State Energy Distribution from Schottky-DiodeI–U Characteristics

Abstract

The effect of an inversion layer on the interface parameters of the Schottky-barrier diode determined by analysis of its I-U characteristics is discussed. It is shown that the formation of the inversion layer at the semiconductor surface reduces the dependence of the barrier height on bias, similarly as the presence of the interface states that are in equilibrium with the metal Fermi level. Expressions for evaluating the density of interface states and the relative interfacial layer thickness are derived. On the basis of these expressions the influence of the inversion layer on the measured density of interface states in silicon and GaAs Schottky diodes is estimated.Es wird der EinfluB der Inversionsschicht auf die Grenzflachenparameter von Schottky-Barrierendioden diskutiert, die aus I-U-Charakteristiken ermittelt wurden. Die Bildung der Inversionsschicht auf der Halbleiteroberflache reduziert die Abhangigkeit der Barrierenhohe von der Spannung in ahnlicher Weise wie die Anwesenheit der Grenzflachenzustande, die im Gleichgewicht mit dem Fermi-Niveau des Metalls sind. Es werden Formeln hergeleitet fur die Bestimmung der Grenzflachenzustandsdichte und der relativen Dicke der Grenzflachenschicht. Mit Hilfe dieser Formeln wird der EinfluD der Inversionsschicht aufdie Grenzflachenzustandsdichte von Siund GaAs-Schottky-Dioden abgeschatzt.

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

“…The evaluation of the interface state energy distribution and relative interfacial layer thickness can be performed using the formula derived by Card and Rhoderick [8] and Kolnik and Ozvold [10]. In the case where all of the interface states are in equilibrium with the semiconductor when the diode is forward biased, while in the reverse direction the change of the interface state charge is negligible.…”

“…The interfacial layer thickness has been evaluated from I-V and C-V measurements by several authors [11][12][13][14]. We have determined the value of d/o i from the following equation [10,15].…”

Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

“…The interface state energy distribution and relative IL thickness is determined by Card and Rhoderick [7], and Kolnik and Ozvold [14]. In the case where the entire interface states are in equilibrium with the semiconductor when the diode is forward biased, whereas in the reverse direction the change of the interface state charge is negligible.…”

“…The IL thickness has been estimated from I-V and C-V measurements [15][16][17][18]. We have evaluated the value of d/e i from the following expression [14,19].…”

Leakage Current Modelling and Optimization of β-Ga 2 O 3 Schottky Barrier Diode with Ni Contact under High Reverse Voltage

“…Other work combined all the mentioned models. 17 It is well known that under high reverse voltage an inversion layer at the surface of the semiconductor near the front contact is formed [18][19][20] which inevitably has an effect on the leakage current of the SBD.…”