Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

Reddy, M. Siva Pratap; Kwon, Minji; Kang, Hoyoul; Kim, Dong-Seok; Lee, Jung‐Hee; Reddy, V. Rajagopal; Jang, Ja-Soon

doi:10.5573/jsts.2013.13.5.492

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…The voltage drop across a diode is determined in terms of the total voltage drop across the diode and the resistance. [44] Furthermore, the values of Φ B obtained from Norde function for all samples are slightly higher than those obtained from Cheung functions. It can be explained as the fact that Cheung functions are only applicable to the nonlinear region in high voltage region of the forward-bias ln I-V characteristics, while Norde's function is applicable to the full forward bias region of the ln I-V characteristics.…”

Section: Doping Concentrationsmentioning

confidence: 64%

F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

Yağlıoğlu¹,

Özmen²

2014

Chinese Phys. B

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In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene): [6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device performance. The main electrical parameters, such as ideality factor (n), barrier height (Φ B0 ), series resistance (R s ), shunt resistance (R sh ), and density of interface states (N ss ) are determined from the forward and reverse bias current-voltage (I-V ) characteristics in the dark and at room temperature. The values of n, R s , Φ B0 , and N ss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ doping concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

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Section: Doping Concentrationsmentioning

confidence: 64%

F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

Yağlıoğlu¹,

Özmen²

2014

Chinese Phys. B

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“…The wide bandgap, high electron mobility, high critical electric field, and good thermal conductivity of gallium nitride (GaN) make GaN useful for high-power and hightemperature applications [1][2][3][4][5][6]. In recent studies, most of attention has been drawn to either silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) or high electron mobility transistors (HEMTs) [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Kim¹,

Seo²,

Yoon³

et al. 2015

Journal of Electrical Engineering and Technology

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-Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

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“…Field-effect transistors (FETs) based on gallium nitride (GaN) have considered as the preferred choice for high power electronic devices owing to the wide band gap, high critical electric field, and high electron mobility of GaN [1][2][3][4][5][6]. AlGaN/GaN-based high electron mobility transistor (HEMT) has the two-dimensional electron gas (2-DEG) generated by the spontaneous polarization and piezoelectric polarization that have superior properties such as high power density and high breakdown voltage, and high channel electron mobility.…”

Section: Introductionmentioning

confidence: 99%

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

Kang¹,

Seo²,

Yoon³

et al. 2016

Journal of Electrical Engineering and Technology

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-This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L GS ) and aperture length (L AP ). We analyze DC and RF parameters inducing on-state current (I on ), threshold voltage (V t ), breakdown voltage (V B ), transconductance (g m ), gate capacitance (C gg ), cut-off frequency (f T ), and maximum oscillation frequency (f max ).

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Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

Abstract: Abstract-WeResults show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

Cited by 8 publications

References 27 publications

F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

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