DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

Abstract

-This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length (L GS ) and aperture length (L AP ). We analyze DC and RF parameters inducing on-state current (I on ), threshold voltage (V t ), breakdown voltage (V B ), transconductance (g m ), gate capacitance (C gg ), cut-off frequency (f T ), and maximum oscillation frequency (f max ).

The optimization of a GaN-based current aperture vertical electron transistor

“…Recently, high-power devices based on the GaN CAVET structure have shown significant progress [11] in power and microwave applications. These applications are part of the field of radio frequencies (RF), where the useful signal is conveyed by a transmitter-receiver transmission chain.…”