Influence of plasma on silicon surface during low-energy plasma deposition process: The comparative study on Si3N4/Si structures

Abstract

The atomic structures of the Si(111)√3×√3 and 6×6Au surfaces studied by lowenergy ion scattering J. Vac. Sci. Technol. A 6, 689 (1988); 10.1116/1.575154Nucleation and initial growth of In deposited on Si3N4 using lowenergy (≤300 eV) accelerated beams in ultrahigh vacuum J.