A study on thermal emission of charges at Si3N4—GaAs interfaces after annealing in N2 and N2 + H2 mixtures

Small-signal deep-level transient spectroscopy as a local probe of potential fluctuations due to electrically active defects

“…It is the difference t psat − 3τ max which is directly proportional to the amplitude of the fluctuations, where t psat is the time needed for reaching the saturation of the peak amplitude. The small-signal DLTS mode was also successfully applied to the reconstruction of the energetic dependence of the capture cross section of deep levels at Si 3 N 4 /GaAs interfaces [12]. This mode could also be helpful in an investigation of metastable defects when pulses U ≈ kT /q are supposed not to change the charge configuration of defects.…”

“…It is evident that the present model does not entirely cover the kinetics of the relaxation treated. The increasing difference between experimental and theoretical curves for smaller U and the analysis of the relations (4), ( 5), (12) showed that the reason for this lies in the description of the Fermi-Dirac distribution functions f 0 , f 1 . Adopting the condition f p (x, t p ) = 1 for a particular t p , an increase of the error would be observed if a spatial spreading of the f 0 , f 1 exists.…”