Metal-induced crystallization of amorphous silicon

Yoon, Soo Young; Park, Seong Jin; Kim, Kyung Ho; Jang, Jin

doi:10.1016/s0040-6090(00)01790-9

Cited by 139 publications

(86 citation statements)

References 12 publications

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“…The similar enhanced growth rate is reported in Ni/Si system. It has been postulated that the enhanced growth rate is a result of field-enhanced diffusion of nickel atoms (Park et al, 1999;Yoon et al, 2001). Having an effective charge of -0.3299e in the Si lattice, Ni atoms move toward the positive electrode under an electric field (Yoon et al, 2001).…”

Section: Mechanism Of Diffusion Assisted Crystallizationmentioning

confidence: 99%

Metal Induced Crystallization

Mahamad¹,

Krishna²

2012

Crystallization - Science and Technology

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Section: Mechanism Of Diffusion Assisted Crystallizationmentioning

confidence: 99%

Metal Induced Crystallization

Mahamad¹,

Krishna²

2012

Crystallization - Science and Technology

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“…The growth of large-domain S-MIRC poly-Si starts from some isolated sites where the density of Ni atoms is above the threshold required for metal-induced crystallization of a-Si. 3,18 These isolated sites, as the crystallization nuclei of S-MIRC, could also be formed by convergence of Ni occurring at the beginning of thermal annealing. 10,11 Some Ni media with density lower than the threshold for the induced crystallization are believed to distribute beyond these isolated crystallized domains.…”

Section: Discussionmentioning

confidence: 99%

Super-Large Domain Metal-Induced Radially Crystallized Poly-Si Made Using Ni(NO3)2/NH4OH Mixed Solution

Meng

Zhao

et al. 2007

Journal of Elec Materi

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By using an aqueous solution of Ni(NO 3 ) 2 /NH 4 OH for formation of Ni media on a-Si, disk-like super-large domain metal-induced radially crystallized (S-MIRC) poly-Si was prepared. The process requires no buffer layer deposition on a-Si. The prepared S-MIRC poly-Si has an average domain size of up to 60 lm, highest hole Hall mobility of 27.1 cm 2 V -1 s -1 , and highest electron Hall mobility of 45.6 cm 2 V -1 s -1 . Poly-Si TFT made on super-large-domain S-MIRC poly-Si had high mobility of~105.8 cm 2 V -1 s -1 , steep sub-threshold slope of~1.0 V decade -1 , high on/off state current ratio of >10 7 and low threshold voltage of~-6.9 V. A simultaneous Ni-collected and induced crystallization model is proposed to explain the growth kinetics of S-MIRC poly-Si.

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“…Besides non-laser crystallization, the simplest method is solid-phase crystallization (SPC), nevertheless SPC requires annealing at 600 C for tens of hours, which makes it unsuitable for use on large area glass substrates [15]. Other non-laser methods employ metal seeds for crystallization, which may result in a large leakage current [16]. Among the laser methods available, excimer-laser annealing (ELA) has been the most widely used because of the resulting excellent crystallinity, fast crystallization speed, and high mobility [17].…”

Section: Looking For Higher Mobilities: Polycrystalline Silicon Tftsmentioning

confidence: 99%