Super-Large Domain Metal-Induced Radially Crystallized Poly-Si Made Using Ni(NO3)2/NH4OH Mixed Solution

Abstract

By using an aqueous solution of Ni(NO 3 ) 2 /NH 4 OH for formation of Ni media on a-Si, disk-like super-large domain metal-induced radially crystallized (S-MIRC) poly-Si was prepared. The process requires no buffer layer deposition on a-Si. The prepared S-MIRC poly-Si has an average domain size of up to 60 lm, highest hole Hall mobility of 27.1 cm 2 V -1 s -1 , and highest electron Hall mobility of 45.6 cm 2 V -1 s -1 . Poly-Si TFT made on super-large-domain S-MIRC poly-Si had high mobility of~105.8 cm 2 V -1 s -1 , steep sub-threshold slope of~1.0 V decade -1 , high on/off state current ratio of >10 7 and low threshold voltage of~-6.9 V. A simultaneous Ni-collected and induced crystallization model is proposed to explain the growth kinetics of S-MIRC poly-Si.

Metal induced crystallization of a‐Si using a nano‐layer of silicon oxide mask (MMIC)

“…We believe they continually join the moving induced fronts to supplement the nickels consumed during the metal-induced crystallization and enhance the crystallization rate [11], if the nickel density is lower than the threshold required for metal-induced crystallization of a-Si. With the increase of the SiO x thickness and the decrease of the area density of the Ni media, the amount of nickel diffused through the SiO x decreases, …”

Solution-based metal induced crystallization of a-Si

“…It is well known that the density of Ni atoms is required to be above a threshold to perform metal-induced lateral crystallization (MILC) of a-Si. [10] Because the dipping conditions are the same for these three samples, we think the area density D A of Ni inducing source deposited on the surface of these three a-Si samples should be equal to each other. Thus the linear density D L at the edge of the inducing hole should increase with the diameter…”

Metal induced crystallized poly-Si Thin Films and Thin Film Transistors

“…Metal induced crystallization of a-Si can be implemented within a wide soaking process window by using nickel salt solution to form nickel media on a-Si [8,11] . Domain size and domain shape of thus prepared S-MIC poly-Si varied with soaking conditions in Ni(NO 3 ) 2 / NH 4 OH mixed solution.…”

“…Recently, we prepared disk-like large domain poly-Si by using nickel salt solution [8] , laterally crystallized needle-like long grain poly-Si by using self-controlledly released nickel silicon oxide mixture and pre-defined crystalline nucleation lines in a 100nm thick silicon dioxide [9] , and continuous zonal domain (CZD) poly-Si in exactly same width through pre-defining crystalline nucleation lines on a nano-layer of silicon dioxide [10] . In this paper, the crystallization process catalyzed by these three different inducing schemes were investigated and compared.…”