Solution-based metal induced crystallization of a-Si

Wu, Congcong; Li, Xuedong; Zhao, Shuyun; Li, Juan; Meng, Zhiguo; Xiong, Shanxin; Zhang, Fang

doi:10.1088/1674-1056/18/3/066

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…It dramatically attracts scientific interest because of the possible application in flat panel displays [1] and solar cells. [2] However, poly-Si thin films have many more defects in grain boundaries [3] or intra-grains, [4] which severely affect the performances and stabilities of the devices made of such a poly-Si material. The hydrogen plasma treatment is one of the most effective methods to passivate the defects in poly-Si materials and devices.…”

Section: Introductionmentioning

confidence: 99%

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Luo

Meng

et al. 2013

Chinese Phys. B

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Section: Introductionmentioning

confidence: 99%

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Luo

Meng

et al. 2013

Chinese Phys. B

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Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

et al. 2017

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Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84 × 10 −9 cm 2 /s at 550 • C is estimated for the trace nickel diffusion in a-Si.

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Two-Step Annealing for Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

Jin

Shi

2014

AMR

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Solution-based nickel (Ni)-induced crystallization (S-MIC) of amorphous silicon (a-Si) films has been studied with a two-step annealing process. We especially introduced Ethyl cellulose (EC) into the Ni-salt solution, so the viscous Ni-salt solution can be uniformly spin-coated on the a-Si film prepared by plasma enhanced chemical vapor deposition (PECVD). The annealing temperature can be first set from room temperature (RT) to 400°C and kept at 400°C for 2 h in nitrogen ambience. And then, it is increased from 500°C to 550°C and kept for several hours in the following annealing. The correlations among crystallization, the concentrations of Ni-salt solution and annealing conditions can be discussed. The experimental results show that with the help of the two-step annealing, the a-Si films can be crystallized at a low temperature of 500°C. The crystalline fraction gets up to 81.2% after annealing at 520°C for 2 h and the grain size of the polycrystalline Si film is approximately 0.2 μm. Energy dispersive spectroscopy (EDS) analysis shows that very little Ni metal atoms reside in the crystallized Si film for S-MIC.

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Solution-based metal induced crystallization of a-Si

Abstract: ) , and Zhang Fang( ) d)a)

Cited by 3 publications

References 12 publications

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

Two-Step Annealing for Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

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