Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

Abstract

Crystallization of amorphous silicon (a-Si) which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization (MIC) polycrystalline silicon (poly-Si) regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84 × 10 −9 cm 2 /s at 550 • C is estimated for the trace nickel diffusion in a-Si.

Hybrid temperature effect on a quartz crystal microbalance resonator in aqueous solutions

“…( 4) and (5). Equation ( 9 π µ q ρ q 0.5 (9) for 20 • C T 35 • C, where a, b, c, and d at a reference temperature T 0 must be obtained for a particular solution, µ q is the shear modulus of the AT-cut crystal (µ q = 2.95 × 10 11 1 g/cm • s 2 ), and ρ q is the density of the crystal (ρ q = 2.684 g/cm 3 ).…”

“…As we know, four methods are typically used to control the temperature effect on the measurements. First, keep the quartz crystal [7][8][9] sensors at a constant temperature by placing them in a temperature-controlled container. Second, use an additional reference crystal, [10][11][12] that is protected from mass changes yet experiences temperature changes iden-tical to the measurement crystal.…”